Inventor · disambiguated record
Nae-In Lee
Also filed as: LEE NAE-EUNG · LEE NAE-IN
100 granted patents·17 pending applications·2,031 citations·filing 1996–2021
99Inventor score
Top patents by PatentIndex Score
117 records- 0199US7642140B2CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·135 cites·10 claims
- 0298US9281277B2Methods of forming wiring structuresSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 8, 2016·491 cites·12 claims
- 0398US6844604B2Dielectric layer for semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 18, 2005·220 cites·41 claims
- 0497US10153219B2Fan out wafer level package type semiconductor package and package on package type semiconductor package including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 11, 2018·52 cites·20 claims
- 0597US6633066B1CMOS integrated circuit devices and substrates having unstrained silicon active layersSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 14, 2003·124 cites·12 claims
- 0696US9953924B2Semiconductor devices including a capping layerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 24, 2018·10 cites·20 claims
- 0796US9711453B2Semiconductor devices including a capping layerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 18, 2017·12 cites·20 claims
- 0896US9368362B2Semiconductor devices including a capping layer and methods of forming semiconductor devices including a capping layerRHA SANGHO·Filed 2014·Granted Jun 14, 2016·42 cites·20 claims
- 0994US10269712B2Semiconductor devices including a capping layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 23, 2019·6 cites·20 claims
- 1094US7195987B2Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 27, 2007·26 cites·17 claims
- 1194US6815764B2Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·71 cites·13 claims
- 1293US9177865B2Method for fabricating semiconductor device having multiple threshold voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 3, 2015·25 cites·19 claims
- 1392US9318573B2Field effect transistor having germanium nanorod and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 19, 2016·15 cites·13 claims
- 1492US9257520B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Feb 9, 2016·7 cites·9 claims
- 1592US6727130B2Method of forming a CMOS type semiconductor device having dual gatesSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 27, 2004·68 cites·15 claims
- 1691US9985036B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 29, 2018·6 cites·20 claims
- 1791US6670677B2SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereonSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 30, 2003·45 cites·15 claims
- 1890US9768300B2Semiconductor devices including a stressor in a recess and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 19, 2017·5 cites·20 claims
- 1990US7494940B2Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·16 cites·23 claims
- 2089US9214530B2Methods of forming semiconductor devices including a stressor in a recessSHIN DONG-SUK·Filed 2013·Granted Dec 15, 2015·6 cites·30 claims
- 2189US9129952B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2013·Granted Sep 8, 2015·8 cites·30 claims
- 2289US6806517B2Flash memory having local SONOS structure using notched gate and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 19, 2004·47 cites·20 claims
- 2389US6486039B2Method of fabricating a trench isolation structure having sidewall oxide layers with different thicknessesSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 26, 2002·53 cites·16 claims
- 2487US10325897B2Method for fabricating substrate structure and substrate structure fabricated by using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 18, 2019·4 cites·20 claims
- 2587US9502563B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 22, 2016·4 cites·28 claims
- 2686US9640443B2Semiconductor devices and methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 2, 2017·5 cites·11 claims
- 2786US7250655B2MOS transistor having a T-shaped gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 31, 2007·38 cites·17 claims
- 2885US6875678B2Post thermal treatment methods of forming high dielectric layers in integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 5, 2005·32 cites·29 claims
- 2985US6605847B2Semiconductor device having gate all around type transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 12, 2003·32 cites·10 claims
- 3084US9812450B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 7, 2017·4 cites·10 claims
- 3184US9741855B2Semiconductor devices including a stressor in a recess and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 22, 2017·2 cites·20 claims
- 3284US6461984B1Semiconductor device using N2O plasma oxide and a method of fabricating the sameKOREA ADVANCED INST SCI & TECH·Filed 2000·Granted Oct 8, 2002·35 cites·10 claims
- 3383US8907426B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 9, 2014·5 cites·20 claims
- 3483US6693013B2Semiconductor transistor using L-shaped spacer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 17, 2004·29 cites·21 claims
- 3582US10128148B2Methods for fabricating semiconductor devices including surface treatment processesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·4 cites·18 claims
- 3682US10008407B2Methods of manufacturing semiconductor devices including conductive structuresSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 26, 2018·4 cites·19 claims
- 3782US9728604B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 8, 2017·3 cites·20 claims
- 3882US6667525B2Semiconductor device having hetero grain stack gateSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 23, 2003·24 cites·12 claims
- 3982US6524902B2Method of manufacturing CMOS semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 25, 2003·26 cites·11 claims
- 4080US6914301B2CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·20 cites·19 claims
- 4180US6881650B2Method for forming SOI substrateSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 19, 2005·29 cites·19 claims
- 4280US6881621B2Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 19, 2005·19 cites·24 claims
- 4379US6716689B2MOS transistor having a T-shaped gate electrode and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 6, 2004·20 cites·19 claims
- 4478US10867923B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 15, 2020·2 cites·8 claims
- 4578US10304734B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 28, 2019·2 cites·20 claims
- 4678US7642148B2Methods of producing semiconductor devices including multiple stress films in interface areaSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·7 cites·11 claims
- 4777US7371633B2Dielectric layer for semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 13, 2008·13 cites·26 claims
- 4875US10062609B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 28, 2018·2 cites·20 claims
- 4975US7112539B2Dielectric layer for semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 26, 2006·16 cites·22 claims
- 5075US7037863B2Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 2, 2006·15 cites·14 claims
Showing the top 50 of 117 patent records by PatentIndex Score.
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