Inventor · disambiguated record
Chia-Han Lai
Also filed as: LAI CHIA-HAN
21 granted patents·3 pending applications·53 citations·filing 2011–2025
93Inventor score
Top patents by PatentIndex Score
24 records- 0195US10847411B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·12 cites·20 claims
- 0292US9653594B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·7 cites·20 claims
- 0391US11929314B2Interconnect structures including a fin structure and a metal capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·2 cites·20 claims
- 0490US9287170B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·8 cites·20 claims
- 0586US2025357295A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0683US10475702B2Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·2 cites·20 claims
- 0783US9245797B2Opening fill process and structure formed therebyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 26, 2016·4 cites·19 claims
- 0883US9219009B2Method of integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 22, 2015·5 cites·20 claims
- 0983US2024379433A1Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1082US8927418B1Systems and methods for reducing contact resistivity of semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·5 cites·20 claims
- 1181US9978583B2Opening fill process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·2 cites·20 claims
- 1278US9252019B2Semiconductor device and method for forming the sameTSAI WEN-CHI·Filed 2011·Granted Feb 2, 2016·5 cites·20 claims
- 1375US2024170381A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1473US12482705B2Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 25, 2025·0 cites·20 claims
- 1570US9627313B2Opening fill process and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·1 cites·20 claims
- 1668US11532503B2Conductive feature structure including a blocking regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 1767US11444028B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·0 cites·20 claims
- 1866US10943823B2Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 1959US10510664B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 2057US9735107B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·0 cites·20 claims
- 2156US10804140B2Interconnect formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·0 cites·21 claims
- 2253US9299607B2Contact critical dimension controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 29, 2016·0 cites·20 claims
- 2349US12362198B2Interface tool and methods of operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 2449US9449922B2Contact critical dimension controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 20, 2016·0 cites·20 claims
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