Inventor · disambiguated record
Xingbi Chen
Also filed as: CHEN XINGBI
20 granted patents·3 pending applications·1,183 citations·filing 1991–2015
95Inventor score
Files withUNIV ELECTRONIC SCIENCE & TECH9CHEN XINGBI7THIRD DIMENSION 3D SC INC2UNIV TONGJI2CHENG DIAN INTELLIGENT POWER MICROELECTRONICS DESIGN CO LTD OF CHENGDU1
Top patents by PatentIndex Score
23 records- 0198US5216275ASemiconductor power devices with alternating conductivity type high-voltage breakdown regionsUNIV ELECTRONIC SCIENCE & TECH·Filed 1991·Granted Jun 1, 1993·868 cites·19 claims
- 0290US6635906B1Voltage sustaining layer with opposite-doped islands for semi-conductor power devicesTHIRD DIMENSION 3D SC INC·Filed 1997·Granted Oct 21, 2003·56 cites·3 claims
- 0390US5726469ASurface voltage sustaining structure for semiconductor devicesUNIV ELEC SCI & TECH OF CHINA·Filed 1995·Granted Mar 10, 1998·120 cites·8 claims
- 0482US6936867B2Semiconductor high-voltage devicesTHIRD DIMENSION SEMICONDUCTOR·Filed 2003·Granted Aug 30, 2005·19 cites·20 claims
- 0580US8378427B2High speed IGBTUNIV ELECTRONIC SCIENCE & TECH·Filed 2010·Granted Feb 19, 2013·6 cites·12 claims
- 0679US6310365B1Surface voltage sustaining structure for semiconductor devices having floating voltage terminalUNIV ELECTRONIC SCIENCE & TECH·Filed 1999·Granted Oct 30, 2001·47 cites·20 claims
- 0777US6998681B2Lateral low-side and high-side high-voltage devicesUNIV ELECTRONIC SCIENCE & TECH·Filed 2004·Granted Feb 14, 2006·24 cites·12 claims
- 0869US7230310B2Super-junction voltage sustaining layer with alternating semiconductor and High-K dielectric regionsUNIV TONGJI·Filed 2002·Granted Jun 12, 2007·15 cites·9 claims
- 0969US6936907B2Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivityUNIV ELECTRONIC SCIENCE & TECH·Filed 2003·Granted Aug 30, 2005·16 cites·20 claims
- 1067US8159026B2Lateral high-voltage semiconductor devices with majorities of both types for conductionCHEN XINGBI·Filed 2010·Granted Apr 17, 2012·3 cites·18 claims
- 1157US8294215B2Low voltage power supplyCHEN XINGBI·Filed 2010·Granted Oct 23, 2012·1 cites·2 claims
- 1257US7659596B2Lateral high-voltage devices with optimum variation lateral flux by using field plateUNIV ELECTRONIC SCIENCE & TECH·Filed 2007·Granted Feb 9, 2010·1 cites·9 claims
- 1354US7227197B2Semiconductor high-voltage devicesTHIRD DIMENSION 3D SC INC·Filed 2004·Granted Jun 5, 2007·3 cites·7 claims
- 1453US7192872B2Method of manufacturing semiconductor device having composite buffer layerUNIV TONGJI·Filed 2002·Granted Mar 20, 2007·4 cites·15 claims
- 1551US2012040521A1Voltage sustaining layer wiht opposite-doped island for seminconductor power devicesCHEN XINGBI·Filed 2011·Application pending·0 cites
- 1644US7701006B2Method of producing a low-voltage power supply in a power integrated circuitUNIV ELECTRONIC SCIENCE & TECH·Filed 2009·Granted Apr 20, 2010·0 cites·9 claims
- 1743US8242533B2Lateral Schottky diodeCHEN XINGBI·Filed 2009·Granted Aug 14, 2012·0 cites·8 claims
- 1843US7795638B2Semiconductor device with a U-shape drift regionUNIV ELECTRONIC SCIENCE & TECH·Filed 2008·Granted Sep 14, 2010·0 cites·1 claims
- 1940US2013168729A1Voltage-Sustaining Layer Consisting of Semiconductor and Insulator Containing Conductive Particles for Semiconductor DeviceUNIV ELECTRONIC SCIENCE & TECH·Filed 2012·Application pending·0 cites
- 2038US8941207B2Surface (lateral) voltage-sustaining region with an insulator film containing conductive particlesCHEN XINGBI·Filed 2013·Granted Jan 27, 2015·0 cites·26 claims
- 2134US8994067B2Both carriers controlled thyristorCHENG DIAN INTELLIGENT POWER MICROELECTRONICS DESIGN CO LTD OF CHENGDU·Filed 2013·Granted Mar 31, 2015·0 cites·16 claims
- 2234US8134206B2Semiconductor deviceCHEN XINGBI·Filed 2010·Granted Mar 13, 2012·0 cites·5 claims
- 2332US2015318346A1Semiconductor device with voltage-sustaining region constructed by semiconductor and insulator containing conductive regionsCHEN XINGBI·Filed 2015·Application pending·0 cites
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