Inventor · disambiguated record
Lin Yang
Also filed as: YANG LIN · YANG LIN-WU
9 granted patents·337 citations·filing 2003–2023
89Inventor score
Files withAPPLIED SPINTRONICS INC2HEADWAY TECHNOLOGIES INC2MACRONIX INT CO LTD2YANGTZE MEMORY TECH CO LTD2UNIV NAT TSING HUA1
Top patents by PatentIndex Score
9 records- 0198US7476919B2MRAM cell structure and method of fabricationHEADWAY TECHNOLOGIES INC·Filed 2006·Granted Jan 13, 2009·102 cites·12 claims
- 0298US7045368B2MRAM cell structure and method of fabricationAPPLIED SPINTRONICS INC·Filed 2004·Granted May 16, 2006·132 cites·22 claims
- 0397US7241632B2MTJ read head with sidewall spacersAPPLIED SPINTRONICS INC·Filed 2005·Granted Jul 10, 2007·80 cites·11 claims
- 0490US11875873B2Multi-mode compatible ZQ calibration circuit in memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 16, 2024·2 cites·20 claims
- 0580US7544983B2MTJ read head with sidewall spacersHEADWAY TECHNOLOGIES INC·Filed 2007·Granted Jun 9, 2009·8 cites·6 claims
- 0673US12394453B2Multi-mode compatible ZQ calibration circuit in memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·18 claims
- 0766US11737348B2Halide material and optical unit and optoelectronic device having the sameUNIV NAT TSING HUA·Filed 2021·Granted Aug 22, 2023·0 cites·8 claims
- 0859US6908814B2Process for a flash memory with high breakdown resistance between gate and contactMACRONIX INT CO LTD·Filed 2003·Granted Jun 21, 2005·8 cites·7 claims
- 0951US6996459B2Method and apparatus for preventing a furnace in a semiconductor process from temperature and gas excursionMACRONIX INT CO LTD·Filed 2004·Granted Feb 7, 2006·5 cites·8 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →