Inventor · disambiguated record
Yury Georgievich Shreter
Also filed as: SHRETER YURY G · SHRETER YURY GEORGIEVICH
10 granted patents·3 pending applications·1,563 citations·filing 2002–2019
88Inventor score
Top patents by PatentIndex Score
13 records- 0195US7265374B2Light emitting semiconductor deviceARIMA COMPUTER CORP·Filed 2005·Granted Sep 4, 2007·1.5k cites·21 claims
- 0279US6577661B1Semiconductor laser with lateral light confinement by polygonal surface optical grating resonatorARIMA OPTOELECTRONICS CORP·Filed 2002·Granted Jun 10, 2003·16 cites·33 claims
- 0369US7011711B2Chemical vapor deposition reactorSHRETER YURY GEORGIEVICH·Filed 2003·Granted Mar 14, 2006·14 cites·18 claims
- 0468US9337025B2Method of laser separation of the epitaxial film or of the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations)SHRETER YURY GEORGIEVICH·Filed 2012·Granted May 10, 2016·2 cites·10 claims
- 0562US9948065B2Semiconductor light-emitting device with an axis of symmetrySHRETER YURY GEORGIEVICH·Filed 2015·Granted Apr 17, 2018·1 cites·18 claims
- 0661US10828727B2Method of separating surface layer of semiconductor crystal using a laser beam perpendicular to the separating planeSHRETER YURY GEORGIEVICH·Filed 2011·Granted Nov 10, 2020·1 cites·7 claims
- 0759US11103960B2Method of separating surface layer of semiconductor crystal using a laser beam perpendicular to the separating planeSHRETER YURY GEORGIEVICH·Filed 2019·Granted Aug 31, 2021·0 cites·5 claims
- 0851US6924511B2Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonatorARIMA OPTOELECTRONICS CORP·Filed 2002·Granted Aug 2, 2005·4 cites·17 claims
- 0949US7023892B2Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injectionARIMA OPTOELECTRONICS CORP·Filed 2002·Granted Apr 4, 2006·2 cites·20 claims
- 1047US2006288933A1Chemical vapor deposition reactorARIMA COMPUTER CORP·Filed 2005·Application pending·0 cites
- 1145US9966296B2Method of laser separation of the epitaxial film or the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations)SHRETER YURY GEORGIEVICH·Filed 2016·Granted May 8, 2018·0 cites·10 claims
- 1243US2007057266A1Light emitting diode with diffraction latticeWANG PEI-JIH·Filed 2006·Application pending·0 cites
- 1337US2006043398A1Light emitting diode with diffraction latticeWANG PEI-JIH·Filed 2004·Application pending·0 cites
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