Inventor · disambiguated record
Geeng-Chuan Chern
Also filed as: CHERN GEENG-CHUAN · CHERN GEENG-CHUAN AKA MICHAEL · CHERN GEENG-CHUAN MICHAEL
55 granted patents·12 pending applications·1,193 citations·filing 1988–2023
98Inventor score
Files withHEFECHIP CORPORATION LTD24APD SEMICONDUCTOR INC10SILICON STORAGE TECH INC9ATMEL CORP8NEXCHIP SEMICONDUCTOR CO LTD7
Top patents by PatentIndex Score
67 records- 0196US11217744B2Magnetic memory device with multiple sidewall spacers covering sidewall of MTJ element and method for manufacturing the sameHEFECHIP CORPORATION LTD·Filed 2019·Granted Jan 4, 2022·7 cites·23 claims
- 0296US11114140B1One time programmable (OTP) bits for physically unclonable functionsHEFECHIP CORPORATION LTD·Filed 2020·Granted Sep 7, 2021·5 cites·17 claims
- 0395US11315937B21.5-transistor (1.5T) one time programmable (OTP) memory with thin gate to drain dielectric and methods thereofHEFECHIP CORPORATION LTD·Filed 2020·Granted Apr 26, 2022·3 cites·20 claims
- 0495US6448160B1Method of fabricating power rectifier device to vary operating parameters and resulting deviceAPD SEMICONDUCTOR INC·Filed 2000·Granted Sep 10, 2002·99 cites·17 claims
- 0594US6399996B1Schottky diode having increased active surface area and method of fabricationAPD SEMICONDUCTOR INC·Filed 2000·Granted Jun 4, 2002·99 cites·19 claims
- 0693US6498367B1Discrete integrated circuit rectifier deviceAPD SEMICONDUCTOR INC·Filed 2000·Granted Dec 24, 2002·88 cites·7 claims
- 0792US6420225B1Method of fabricating power rectifier deviceAPD SEMICONDUCTOR INC·Filed 2001·Granted Jul 16, 2002·86 cites·20 claims
- 0892US5081054AFabrication process for programmable and erasable MOS memory deviceATMEL CORP·Filed 1991·Granted Jan 14, 1992·88 cites·4 claims
- 0991US6743703B2Power diode having improved on resistance and breakdown voltageAPD SEMICONDUCTOR INC·Filed 2002·Granted Jun 1, 2004·74 cites·7 claims
- 1091US6404033B1Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabricationAPD SEMICONDUCTOR INC·Filed 2000·Granted Jun 11, 2002·68 cites·18 claims
- 1189US6426541B2Schottky diode having increased forward current with improved reverse bias characteristics and method of fabricationAPD SEMICONDUCTOR INC·Filed 2000·Granted Jul 30, 2002·55 cites·13 claims
- 1288US6624030B2Method of fabricating power rectifier device having a laterally graded P-N junction for a channel regionADVANCED POWER DEVICES INC·Filed 2000·Granted Sep 23, 2003·45 cites·18 claims
- 1387US11177431B2Magnetic memory device and method for manufacturing the sameHEFECHIP CORPORATION LTD·Filed 2019·Granted Nov 16, 2021·2 cites·22 claims
- 1487US11074985B1One-time programmable memory device and method for operating the sameHEFECHIP CORPORATION LTD·Filed 2020·Granted Jul 27, 2021·2 cites·24 claims
- 1587US7668013B2Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratioSILICON STORAGE TECH INC·Filed 2008·Granted Feb 23, 2010·17 cites·8 claims
- 1687US7250668B2Integrated circuit including power diodeDIODES INC·Filed 2005·Granted Jul 31, 2007·14 cites·17 claims
- 1786US11139368B2Trench capacitor having improved capacitance and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2019·Granted Oct 5, 2021·3 cites·10 claims
- 1886US6563167B2Semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edgesSILICON STORAGE TECH INC·Filed 2001·Granted May 13, 2003·34 cites·17 claims
- 1986US4833096AEEPROM fabrication processATMEL CORP·Filed 1988·Granted May 23, 1989·80 cites·18 claims
- 2085US6706592B2Self aligned method of forming a semiconductor array of non-volatile memory cellsSILICON STORAGE TECH INC·Filed 2002·Granted Mar 16, 2004·38 cites·12 claims
- 2185US6515330B1Power device having vertical current path with enhanced pinch-off for current limitingAPD SEMICONDUCTOR INC·Filed 2002·Granted Feb 4, 2003·40 cites·17 claims
- 2285US4859619AEPROM fabrication process forming tub regions for high voltage devicesATMEL CORP·Filed 1988·Granted Aug 22, 1989·70 cites·10 claims
- 2384US11362097B1One-time programmable memory device and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2020·Granted Jun 14, 2022·1 cites·17 claims
- 2484US10916664B2Non-volatile memory and manufacturing method for the sameNEXCHIP SEMICONDUCTOR CO LTD·Filed 2020·Granted Feb 9, 2021·1 cites·10 claims
- 2583US11152381B1MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the sameHEFECHIP CORPORATION LTD·Filed 2020·Granted Oct 19, 2021·1 cites·10 claims
- 2683US5066992AProgrammable and erasable MOS memory deviceATMEL CORP·Filed 1990·Granted Nov 19, 1991·58 cites·4 claims
- 2782US6765264B1Method of fabricating power rectifier device to vary operating parameters and resulting deviceADVANCED POWER DEVICES·Filed 2003·Granted Jul 20, 2004·32 cites·4 claims
- 2878US11545617B2Method of fabricating magnetic memory deviceHEFECHIP CORPORATION LTD·Filed 2021·Granted Jan 3, 2023·0 cites·5 claims
- 2976US11296090B2Semiconductor memory device with buried capacitor and fin-like electrodesHEFECHIP CORPORATION LTD·Filed 2019·Granted Apr 5, 2022·1 cites·13 claims
- 3076US6979861B2Power device having reduced reverse bias leakage currentAPD SEMICONDUCTOR INC·Filed 2002·Granted Dec 27, 2005·25 cites·14 claims
- 3176US2023413540A1One-time programmable memory unit cellHEFECHIP CORPORATION LTD·Filed 2023·Application pending·0 cites
- 3271US6537860B2Method of fabricating power VLSI diode devicesAPD SEMICONDUCTOR INC·Filed 2000·Granted Mar 25, 2003·19 cites·19 claims
- 3369US9502581B2Non-volatile floating gate memory cellsATMEL CORP·Filed 2014·Granted Nov 22, 2016·2 cites·20 claims
- 3468US11610893B2Method for fabricating semiconductor memory device with buried capacitor and fin-like electrodesHEFECHIP CORPORATION LTD·Filed 2022·Granted Mar 21, 2023·0 cites·7 claims
- 3568US2021408017A1Method for fabricating a metal-oxide-semiconductor transistorHEFECHIP CORPORATION LTD·Filed 2021·Application pending·0 cites
- 3664US11776992B2Trench capacitor having improved capacitance and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2021·Granted Oct 3, 2023·0 cites·10 claims
- 3760US10957776B2Method of fabricating MOSFETNEXCHIP SEMICONDUCTOR CORP·Filed 2020·Granted Mar 23, 2021·0 cites·8 claims
- 3860US7084453B2Method of forming different oxide thickness for high voltage transistor and memory cell tunnel dielectricSILICON STORAGE TECH INC·Filed 2004·Granted Aug 1, 2006·7 cites·13 claims
- 3959US11088155B2Method for fabricating split-gate non-volatile memoryNEXCHIP SEMICONDUCTOR CO LTD·Filed 2020·Granted Aug 10, 2021·0 cites·10 claims
- 4058US6967372B2Semiconductor memory array of floating gate memory cells with vertical control gate sidewalls and insulation spacersSILICON STORAGE TECH INC·Filed 2001·Granted Nov 22, 2005·8 cites·10 claims
- 4158US2024405015A1Semiconductor device with esd protection structure and method of making sameHEFECHIP CORPORATION LTD·Filed 2023·Application pending·0 cites
- 4258US2024179896A11.5t otp memory device and method for fabricating sameHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 4357US2024306363A1Stacked capacitor, method for making the same and memory deviceHEFECHIP CORPORATION LTD·Filed 2023·Application pending·0 cites
- 4456US10971595B2MOFSET and method of fabricating sameNEXCHIP SEMICONDUCTOR CORP·Filed 2018·Granted Apr 6, 2021·0 cites·5 claims
- 4556US10636801B2Split-gate non-volatile memory and fabrication method thereofNEXCHIP SEMICONDUCTOR CO LTD·Filed 2018·Granted Apr 28, 2020·0 cites·11 claims
- 4656US9142306B2Selecting memory cells using source linesATMEL CORP·Filed 2013·Granted Sep 22, 2015·1 cites·25 claims
- 4755US10854758B2Non-volatile memory and manufacturing method for the sameNEXCHIP SEMICONDUCTOR CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·7 claims
- 4855US2024032291A1Non-volatile memory, fabrication and control methods thereofHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 4955US2024276716A1Split-gate non-volatile memory device and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2023·Application pending·0 cites
- 5054US7974136B2Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratioSILICON STORAGE TECH INC·Filed 2009·Granted Jul 5, 2011·2 cites·8 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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