Inventor · disambiguated record
Daehyun Jang
Also filed as: JANG DAEHYUN
23 granted patents·204 citations·filing 2010–2022
95Inventor score
Top patents by PatentIndex Score
23 records- 0197US8383482B2Three-dimensional semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 26, 2013·39 cites·17 claims
- 0296US9455268B2Staircase-shaped connection structures of three-dimensional semiconductor devicesOH JUNG-IK·Filed 2014·Granted Sep 27, 2016·80 cites·20 claims
- 0395US8592873B2Semiconductor memory devices and methods of forming the sameKIM JUNG HO·Filed 2011·Granted Nov 26, 2013·24 cites·14 claims
- 0493US11456316B2Semiconductor device having word line separation layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 27, 2022·4 cites·20 claims
- 0593US9087790B2Method of fabricating three-dimensional semiconductor device and three-dimensional semiconductor device fabricated using the sameOH JUNG-IK·Filed 2013·Granted Jul 21, 2015·18 cites·16 claims
- 0691US10971516B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 6, 2021·9 cites·20 claims
- 0788US8728893B2Method of fabricating a three-dimentional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 20, 2014·8 cites·13 claims
- 0885US9941122B2Methods of forming staircase-shaped connection structures of three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 10, 2018·3 cites·14 claims
- 0984US8980731B2Methods of forming a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Mar 17, 2015·6 cites·20 claims
- 1082US10522350B2Method of fabricating three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 31, 2019·3 cites·20 claims
- 1182US10211053B2Methods of forming staircase-shaped connection structures of three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 19, 2019·2 cites·12 claims
- 1280US9466612B2Semiconductor memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 11, 2016·2 cites·14 claims
- 1376US10672790B2Method of fabricating three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 2, 2020·2 cites·15 claims
- 1475US9257441B2Semiconductor memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 9, 2016·2 cites·19 claims
- 1568US8963231B2Three dimensional semiconductor memory devices and methods of fabricating the sameLEE SUNGHAE·Filed 2012·Granted Feb 24, 2015·2 cites·30 claims
- 1665US12010849B2Semiconductor device having word line separation layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 1763US10685837B2Methods of forming staircase-shaped connection structures of three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 16, 2020·0 cites·20 claims
- 1862US11864385B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1962US11521983B2Method of fabricating three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 6, 2022·0 cites·12 claims
- 2059US11469244B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 2149US9972638B2Methods of fabricating three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 15, 2018·0 cites·27 claims
- 2248US11515322B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 2340US10950419B2Shrouds and substrate treating systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 16, 2021·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →