Inventor · disambiguated record
Clemens Ostermaier
Also filed as: OSTERMAIER CLEMENS
32 granted patents·7 pending applications·136 citations·filing 2012–2024
96Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG29INFINEON TECHNOLOGIES AUSTRIA6OSTERMAIER CLEMENS2PRECHTL GERHARD2
Top patents by PatentIndex Score
39 records- 0197US9048303B1Group III-nitride-based enhancement mode transistorINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 2, 2015·32 cites·18 claims
- 0290US9837520B2Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 5, 2017·6 cites·17 claims
- 0390US9728470B1Semiconductor structure and methodsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Aug 8, 2017·12 cites·9 claims
- 0489US9837522B2III-nitride bidirectional deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Dec 5, 2017·6 cites·22 claims
- 0589US9035355B2Multi-channel HEMTOSTERMAIER CLEMENS·Filed 2012·Granted May 19, 2015·10 cites·20 claims
- 0688US10199216B2Semiconductor wafer and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 5, 2019·5 cites·12 claims
- 0788US9728630B2High-electron-mobility transistor having a buried field plateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Aug 8, 2017·7 cites·9 claims
- 0888US9647104B2Group III-nitride-based enhancement mode transistor having a heterojunction fin structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted May 9, 2017·5 cites·9 claims
- 0988US9142550B2High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diodeINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Sep 22, 2015·9 cites·20 claims
- 1087US9847394B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 19, 2017·5 cites·20 claims
- 1185US11349012B2Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted May 31, 2022·2 cites·16 claims
- 1285US9337279B2Group III-nitride-based enhancement mode transistorINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted May 10, 2016·6 cites·22 claims
- 1384US10600710B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Mar 24, 2020·3 cites·10 claims
- 1484US8872235B2Integrated Schottky diode for HEMTsPRECHTL GERHARD·Filed 2012·Granted Oct 28, 2014·6 cites·16 claims
- 1582US9263545B2Method of manufacturing a high breakdown voltage III-nitride deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Feb 16, 2016·3 cites·13 claims
- 1680US10177061B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 8, 2019·3 cites·19 claims
- 1778US10090406B2Non-planar normally off compound semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Oct 2, 2018·4 cites·20 claims
- 1870US9666705B2Contact structures for compound semiconductor devicesPRECHTL GERHARD·Filed 2012·Granted May 30, 2017·3 cites·18 claims
- 1970US9076763B2High breakdown voltage III-nitride deviceOSTERMAIER CLEMENS·Filed 2012·Granted Jul 7, 2015·2 cites·13 claims
- 2069US10126355B1Semiconductor probe test card with integrated hall measurement featuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Nov 13, 2018·2 cites·19 claims
- 2168US10128133B1Method of conditioning an etch chamber for contaminant free etching of a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Nov 13, 2018·1 cites·20 claims
- 2267US10038085B2High electron mobility transistor with carrier injection mitigation gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jul 31, 2018·1 cites·4 claims
- 2367US9515162B2Surface treatment of semiconductor substrate using free radical state fluorine particlesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Dec 6, 2016·2 cites·14 claims
- 2467US9349829B2Method of manufacturing a multi-channel HEMTINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted May 24, 2016·1 cites·8 claims
- 2562US12159918B2Group III nitride-based transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Dec 3, 2024·0 cites·13 claims
- 2662US2025054766A1Method for fabricating a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2757US9412834B2Method of manufacturing HEMTs with an integrated Schottky diodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Aug 9, 2016·0 cites·9 claims
- 2857US2025194137A1Semiconductor substrate and method of forming a n-doped group iii nitride contactINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2956US10304923B2Method of forming a vertical potential short in a periphery region of a III-nitride stack for preventing lateral leakageINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted May 28, 2019·0 cites·20 claims
- 3055US2024170487A1Group iii nitride transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 3155US2024304670A1Multi-Channel High Electron Mobility Transistor with Reduced Input CapacitanceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 3252US11557670B2Type III-V semiconductor device with improved leakageINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jan 17, 2023·0 cites·15 claims
- 3352US11114554B2High-electron-mobility transistor having a buried field plateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Sep 7, 2021·0 cites·11 claims
- 3452US9947600B2Semiconductor structure having a test structure formed in a group III nitride layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 17, 2018·0 cites·5 claims
- 3551US10038051B2Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakageINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jul 31, 2018·0 cites·18 claims
- 3649US2016155834A1III-Nitride Device Having a Buried Insulating RegionINFINEON TECHNOLOGIES AUSTRIA·Filed 2016·Application pending·0 cites
- 3744US2024332409A1Multi-channel high electron mobility transistor with doped gate finsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 3843US9590048B2Electronic deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Mar 7, 2017·0 cites·26 claims
- 3935US2017103978A1Switch Circuit, Semiconductor Device and MethodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
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