Inventor · disambiguated record
Brett Hull
Also filed as: HULL BRETT · HULL BRETT ADAM
21 granted patents·1 pending application·133 citations·filing 2006–2023
92Inventor score
Top patents by PatentIndex Score
22 records- 0198US9887287B1Power semiconductor devices having gate trenches with implanted sidewalls and related methodsCREE INC·Filed 2016·Granted Feb 6, 2018·86 cites·22 claims
- 0290US8288220B2Methods of forming semiconductor devices including epitaxial layers and related structuresHULL BRETT ADAM·Filed 2009·Granted Oct 16, 2012·19 cites·38 claims
- 0386US9530844B2Transistor structures having reduced electrical field at the gate oxide and methods for making sameCREE INC·Filed 2012·Granted Dec 27, 2016·7 cites·23 claims
- 0485US10861931B2Power semiconductor devices having gate trenches and buried edge terminations and related methodsCREE INC·Filed 2016·Granted Dec 8, 2020·3 cites·21 claims
- 0584US7727904B2Methods of forming SiC MOSFETs with high inversion layer mobilityCREE INC·Filed 2006·Granted Jun 1, 2010·10 cites·14 claims
- 0677US12159909B2Power semiconductor device with reduced strainWOLFSPEED INC·Filed 2023·Granted Dec 3, 2024·0 cites·18 claims
- 0769US10847647B2Power semiconductor devices having top-side metallization structures that include buried grain stop layersCREE INC·Filed 2019·Granted Nov 24, 2020·1 cites·28 claims
- 0867US11869948B2Power semiconductor device with reduced strainWOLFSPEED INC·Filed 2021·Granted Jan 9, 2024·0 cites·31 claims
- 0966US11837629B2Power semiconductor devices having gate trenches and buried edge terminations and related methodsWOLFSPEED INC·Filed 2020·Granted Dec 5, 2023·0 cites·21 claims
- 1066US10115815B2Transistor structures having a deep recessed P+ junction and methods for making sameCREE INC·Filed 2012·Granted Oct 30, 2018·1 cites·20 claims
- 1166US8314462B2Semiconductor devices including electrodes with integrated resistancesHULL BRETT ADAM·Filed 2009·Granted Nov 20, 2012·4 cites·19 claims
- 1261US8536066B2Methods of forming SiC MOSFETs with high inversion layer mobilityDAS MRINAL K·Filed 2010·Granted Sep 17, 2013·1 cites·10 claims
- 1360US11184001B2Power switching devices with high dV/dt capability and methods of making such devicesCREE INC·Filed 2020·Granted Nov 23, 2021·0 cites·24 claims
- 1457US10886396B2Transistor structures having a deep recessed P+ junction and methods for making sameCREE INC·Filed 2018·Granted Jan 5, 2021·0 cites·29 claims
- 1554US10840367B2Transistor structures having reduced electrical field at the gate oxide and methods for making sameCREE INC·Filed 2016·Granted Nov 17, 2020·0 cites·22 claims
- 1652US10601413B2Power switching devices with DV/DT capability and methods of making such devicesCREE INC·Filed 2017·Granted Mar 24, 2020·0 cites·20 claims
- 1750US11222955B2Semiconductor power devices having gate dielectric layers with improved breakdown characteristics and methods of forming such devicesWOLFSPEED INC·Filed 2020·Granted Jan 11, 2022·0 cites·20 claims
- 1849US9455356B2High power silicon carbide (SiC) PiN diodes having low forward voltage dropsDAS MRINAL·Filed 2006·Granted Sep 27, 2016·1 cites·26 claims
- 1947US2022140132A1Passivation structures for semiconductor devicesCREE INC·Filed 2020·Application pending·0 cites
- 2046US9640652B2Semiconductor devices including epitaxial layers and related methodsHULL BRETT ADAM·Filed 2012·Granted May 2, 2017·0 cites·33 claims
- 2145US10510905B2Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift regionCREE INC·Filed 2017·Granted Dec 17, 2019·0 cites·17 claims
- 2242US10068834B2Floating bond pad for power semiconductor devicesCREE INC·Filed 2013·Granted Sep 4, 2018·0 cites·22 claims
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