Inventor · disambiguated record
Mrinal K. Das
Also filed as: DAS MRINAL · DAS MRINAL K · DAS MRINAL KANTI
43 granted patents·3 pending applications·514 citations·filing 2000–2024
98Inventor score
Top patents by PatentIndex Score
46 records- 0197US7528040B2Methods of fabricating silicon carbide devices having smooth channelsCREE INC·Filed 2005·Granted May 5, 2009·51 cites·30 claims
- 0296US9640617B2High performance power moduleCREE INC·Filed 2013·Granted May 2, 2017·24 cites·48 claims
- 0394US9373617B2High current, low switching loss SiC power moduleCREE INC·Filed 2014·Granted Jun 21, 2016·17 cites·34 claims
- 0494US6956238B2Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channelCREE INC·Filed 2001·Granted Oct 18, 2005·90 cites·44 claims
- 0594US6767843B2Method of N2O growth of an oxide layer on a silicon carbide layerCREE INC·Filed 2001·Granted Jul 27, 2004·94 cites·28 claims
- 0690US7118970B2Methods of fabricating silicon carbide devices with hybrid well regionsCREE INC·Filed 2004·Granted Oct 10, 2006·51 cites·31 claims
- 0789US9998109B1Power module with improved reliabilityCREE INC·Filed 2017·Granted Jun 12, 2018·7 cites·25 claims
- 0887US6972436B2High voltage, high temperature capacitor and interconnection structuresCREE INC·Filed 2001·Granted Dec 6, 2005·39 cites·37 claims
- 0985US7414268B2High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Aug 19, 2008·12 cites·21 claims
- 1084US7727904B2Methods of forming SiC MOSFETs with high inversion layer mobilityCREE INC·Filed 2006·Granted Jun 1, 2010·10 cites·14 claims
- 1182US2024380320A1High speed, efficient sic power moduleWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 1281US8618553B2Process for producing silicon carbide crystals having increased minority carrier lifetimesCARTER JR CALVIN H·Filed 2010·Granted Dec 31, 2013·2 cites·12 claims
- 1381US7391057B2High voltage silicon carbide devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Jun 24, 2008·9 cites·18 claims
- 1478US7022378B2Nitrogen passivation of interface states in SiO2/SiC structuresCREE INC·Filed 2003·Granted Apr 4, 2006·20 cites·6 claims
- 1576US8866150B2Silicon carbide power devices including P-type epitaxial layers and direct ohmic contactsDAS MRINAL KANTI·Filed 2007·Granted Oct 21, 2014·6 cites·14 claims
- 1676US7883949B2Methods of forming silicon carbide switching devices including P-type channelsCREE INC·Filed 2007·Granted Feb 8, 2011·4 cites·20 claims
- 1775US7705362B2Silicon carbide devices with hybrid well regionsCREE INC·Filed 2006·Granted Apr 27, 2010·5 cites·27 claims
- 1874US11961879B2IC including capacitor having segmented bottom plateTEXAS INSTRUMENTS INC·Filed 2023·Granted Apr 16, 2024·0 cites·20 claims
- 1973US6998322B2Methods of fabricating high voltage, high temperature capacitor and interconnection structuresCREE INC·Filed 2003·Granted Feb 14, 2006·16 cites·19 claims
- 2071US6957057B2Switched capacitor mixer circuit to attain high gain and linearity in radio frequency receiversTEXAS INSTRUMENTS INC·Filed 2002·Granted Oct 18, 2005·13 cites·11 claims
- 2170US12046998B2High speed, efficient SiC power moduleWOLFSPEED INC·Filed 2020·Granted Jul 23, 2024·0 cites·22 claims
- 2270US11888392B2High speed, efficient sic power moduleWOLFSPEED INC·Filed 2020·Granted Jan 30, 2024·0 cites·22 claims
- 2370US10181532B2Low loss electronic devices having increased doping for reduced resistance and methods of forming the sameCREE INC·Filed 2013·Granted Jan 15, 2019·2 cites·24 claims
- 2469US12362740B2Transistor switching based on voltage sensingTEXAS INSTRUMENTS INC·Filed 2023·Granted Jul 15, 2025·0 cites·19 claims
- 2569US10707858B2Power module with improved reliabilityCREE INC·Filed 2018·Granted Jul 7, 2020·1 cites·21 claims
- 2667US11688760B2IC including capacitor having segmented bottom plateTEXAS INSTRUMENTS INC·Filed 2021·Granted Jun 27, 2023·0 cites·14 claims
- 2765US8859366B2Methods of fabricating silicon carbide devices having smooth channelsDAS MRINAL K·Filed 2012·Granted Oct 14, 2014·1 cites·15 claims
- 2865US7572741B2Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygenCREE INC·Filed 2005·Granted Aug 11, 2009·2 cites·17 claims
- 2963US11716078B2Transistor switching based on voltage sensingTEXAS INSTRUMENTS INC·Filed 2022·Granted Aug 1, 2023·0 cites·18 claims
- 3063US9552997B2Silicon carbide switching devices including P-type channelsDAS MRINAL KANTI·Filed 2011·Granted Jan 24, 2017·1 cites·11 claims
- 3161US8536066B2Methods of forming SiC MOSFETs with high inversion layer mobilityDAS MRINAL K·Filed 2010·Granted Sep 17, 2013·1 cites·10 claims
- 3261US8188483B2Silicon carbide devices having smooth channelsDAS MRINAL K·Filed 2009·Granted May 29, 2012·1 cites·32 claims
- 3360US7067176B2Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environmentCREE INC·Filed 2001·Granted Jun 27, 2006·7 cites·10 claims
- 3460US6804291B1Device and method of digital gain programming using sigma-delta modulatorTEXAS INSTRUMENTS INC·Filed 2000·Granted Oct 12, 2004·9 cites·21 claims
- 3557US9142663B2Silicon carbide devices having smooth channelsCREE INC·Filed 2014·Granted Sep 22, 2015·0 cites·8 claims
- 3657US7615801B2High voltage silicon carbide devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Nov 10, 2009·1 cites·24 claims
- 3755US7811943B2Process for producing silicon carbide crystals having increased minority carrier lifetimesCREE INC·Filed 2005·Granted Oct 12, 2010·0 cites·45 claims
- 3854US11171229B2Low switching loss high performance power moduleCREE INC·Filed 2017·Granted Nov 9, 2021·0 cites·41 claims
- 3954US8119539B2Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygenDAS MRINAL K·Filed 2009·Granted Feb 21, 2012·0 cites·5 claims
- 4054US6833753B2Method and system for signal dependent boosting in sampling circuitsTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 21, 2004·12 cites·18 claims
- 4152US10141302B2High current, low switching loss SiC power moduleCREE INC·Filed 2016·Granted Nov 27, 2018·0 cites·20 claims
- 4251US10680518B2High speed, efficient SiC power moduleCREE INC·Filed 2016·Granted Jun 9, 2020·0 cites·22 claims
- 4351US6914546B2Device and method of digital gain programming using sigma-delta modulatorTEXAS INSTRUMENTS INC·Filed 2004·Granted Jul 5, 2005·5 cites·7 claims
- 4449US9455356B2High power silicon carbide (SiC) PiN diodes having low forward voltage dropsDAS MRINAL·Filed 2006·Granted Sep 27, 2016·1 cites·26 claims
- 4548US2023006049A1Silicon carbide power device with an enhanced junction field effect transistor regionHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2021·Application pending·0 cites
- 4641US2006261346A1High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the sameRYU SEI-HYUNG·Filed 2005·Application pending·0 cites
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