Inventor · disambiguated record
Mitsugu Wada
Also filed as: WADA MITSUGU
21 granted patents·3 pending applications·250 citations·filing 1997–2023
95Inventor score
Top patents by PatentIndex Score
24 records- 0197US11367807B2Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2018·Granted Jun 21, 2022·27 cites·12 claims
- 0292US11227974B2Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2018·Granted Jan 18, 2022·4 cites·5 claims
- 0387US11444222B2Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2018·Granted Sep 13, 2022·4 cites·5 claims
- 0482US6516016B1High-power semiconductor laser device having current confinement structure and index-guided structure, and oscillating in transverse modeFUJI PHOTO FILM CO LTD·Filed 2000·Granted Feb 4, 2003·19 cites·43 claims
- 0578US11616167B2Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2018·Granted Mar 28, 2023·1 cites·7 claims
- 0677US6709513B2Substrate including wide low-defect region for use in semiconductor elementFUJI PHOTO FILM CO LTD·Filed 2002·Granted Mar 23, 2004·19 cites·24 claims
- 0776US6535536B2Semiconductor laser elementFUJI PHOTO FILM CO LTD·Filed 2001·Granted Mar 18, 2003·13 cites·18 claims
- 0875US6400743B1High-power semiconductor laser device having current confinement structure and index-guided structureFUJI PHOTO FILM CO LTD·Filed 2000·Granted Jun 4, 2002·13 cites·64 claims
- 0975US6127691ASemiconductor laser deviceFUJI PHOTO FILM CO LTD·Filed 1998·Granted Oct 3, 2000·41 cites·2 claims
- 1074US5995528ASemiconductor laserFUJI PHOTO FILM CO LTD·Filed 1997·Granted Nov 30, 1999·38 cites·3 claims
- 1171US12300762B2Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting elementNIKKISO CO LTD·Filed 2023·Granted May 13, 2025·0 cites·11 claims
- 1267US6625190B1Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layersFUJI PHOTO FILM CO LTD·Filed 2000·Granted Sep 23, 2003·8 cites·6 claims
- 1363US6028874ASemiconductor laserFUJI PHOTO FILM CO LTD·Filed 1997·Granted Feb 22, 2000·26 cites·4 claims
- 1459US11824137B2Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting elementNIKKISO CO LTD·Filed 2019·Granted Nov 21, 2023·0 cites·8 claims
- 1559US6973109B2Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layerFUJI PHOTO FILM CO LTD·Filed 2001·Granted Dec 6, 2005·5 cites·26 claims
- 1655US6797416B2GaN substrate formed under controlled growth condition over GaN layer having discretely formed pitsFUJI PHOTO FILM CO LTD·Filed 2003·Granted Sep 28, 2004·4 cites·24 claims
- 1749US6600770B2High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single modeFUJI PHOTO FILM CO LTD·Filed 2001·Granted Jul 29, 2003·2 cites·9 claims
- 1849US6285695B1Semiconductor laserFUJI PHOTO FILM CO LTD·Filed 1999·Granted Sep 4, 2001·14 cites·3 claims
- 1945US6876688B1Semiconductor laser and method of manufacturing the sameFUJI PHOTO FILM CO LTD·Filed 1999·Granted Apr 5, 2005·11 cites·16 claims
- 2045US2006241479A1Endocavity utrasonic probeFUJI PHOTO FILM CO LTD·Filed 2006·Application pending·0 cites
- 2143US6553046B2High-power semiconductor laser device including resistance reduction layer which has intermediate energy gapFUJI PHOTO FILM CO LTD·Filed 2001·Granted Apr 22, 2003·1 cites·6 claims
- 2242US2021066546A1Nitride semiconductor element and nitride semiconductor element production methodNIKKISO CO LTD·Filed 2018·Application pending·0 cites
- 2341US7394478B2Exposure systemFUJIFILM CORP·Filed 2004·Granted Jul 1, 2008·0 cites·6 claims
- 2437US2003047746A1GaN substrate formed over GaN layer having discretely formed minute holes produced by use of discretely arranged growth suppression mask elementsFUJI PHOTO FILM CO LTD·Filed 2002·Application pending·0 cites
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