Inventor · disambiguated record
Zhidan Li Tolt
Also filed as: TOLT ZHIDAN L · TOLT ZHIDAN LI
19 granted patents·3 pending applications·646 citations·filing 1997–2012
95Inventor score
Top patents by PatentIndex Score
22 records- 0197US6432206B1Heating element for use in a hot filament chemical vapor deposition chamberSI DIAMOND TECHN INC·Filed 2000·Granted Aug 13, 2002·371 cites·40 claims
- 0296US7453705B2Barrier, such as a hermetic barrier layer for O/PLED and other electronic devices on plasticALIEN TECHNOLOGY CORP·Filed 2006·Granted Nov 18, 2008·39 cites·7 claims
- 0390US6664722B1Field emission materialSI DIAMOND TECHN INC·Filed 2000·Granted Dec 16, 2003·38 cites·13 claims
- 0489US6582780B1Substrate support for use in a hot filament chemical vapor deposition chamberSI DIAMOND TECHN INC·Filed 2000·Granted Jun 24, 2003·42 cites·5 claims
- 0586US7521851B2Electron emitting composite based on regulated nano-structures and a cold electron source using the compositeTOLT ZHIDAN L·Filed 2006·Granted Apr 21, 2009·14 cites·36 claims
- 0685US6580225B2Cold cathodeSI DIAMOND TECHN INC·Filed 2002·Granted Jun 17, 2003·29 cites·7 claims
- 0783US6479939B1Emitter material having a plurlarity of grains with interfaces in betweenSI DIAMOND TECHN INC·Filed 1999·Granted Nov 12, 2002·27 cites·13 claims
- 0879US6692574B1Gas dispersion apparatus for use in a hot filament chemical vapor deposition chamberSI DIAMOND TECHN INC·Filed 2000·Granted Feb 17, 2004·18 cites·17 claims
- 0974US7459839B2Low voltage electron source with self aligned gate apertures, and luminous display using the electron sourceTOLT ZHIDAN LI·Filed 2003·Granted Dec 2, 2008·10 cites·32 claims
- 1071US8102108B2Low voltage electron source with self aligned gate apertures, fabrication method thereof, and devices using the electron sourceTOLT ZHIDAN LI·Filed 2007·Granted Jan 24, 2012·2 cites·29 claims
- 1171US5869922ACarbon film for field emission devicesSI DIAMOND TECHN INC·Filed 1997·Granted Feb 9, 1999·22 cites·10 claims
- 1266US8039042B2Low voltage electron source with self aligned gate apertures, fabrication method thereof, and luminous display using the electron sourceTOLT ZHIDAN LI·Filed 2007·Granted Oct 18, 2011·1 cites·26 claims
- 1361US6107732AInhibiting edge emission for an addressable field emission thin film flat cathode displaySI DIAMOND TECHN INC·Filed 1998·Granted Aug 22, 2000·12 cites·6 claims
- 1454US6630023B2Surface treatment process used in growing a carbon filmSI DIAMOND TECHN INC·Filed 2001·Granted Oct 7, 2003·3 cites·1 claims
- 1552US7070651B1Process for growing a carbon filmSI DIAMOND TECHN INC·Filed 1997·Granted Jul 4, 2006·9 cites·26 claims
- 1652US6181056B1Cold cathode carbon filmSI DIAMOND TECHN INC·Filed 1998·Granted Jan 30, 2001·9 cites·3 claims
- 1751US2012219118A1Low voltage electron source with self aligned gate apertures, fabrication method thereof, and x-ray generator using the electron sourceTOLT ZHIDAN LI·Filed 2012·Application pending·0 cites
- 1846US6819035B2Cold cathodeSI DIAMOND TECHN INC·Filed 2003·Granted Nov 16, 2004·0 cites·2 claims
- 1946US2008169745A1Low voltage electron source with self aligned gate apertures, fabrication method thereof, and luminous display using the electron sourceTOLT ZHIDAN L·Filed 2007·Application pending·0 cites
- 2044US2002195962A1Cold cathodeSI DIAMOND TECHN INC·Filed 2002·Application pending·0 cites
- 2142US6213837B1Inhibiting edge emission for an addressable field emission thin film flat cathode displaySI DIAMOND TECHN INC·Filed 2000·Granted Apr 10, 2001·0 cites·9 claims
- 2230US6310432B1Surface treatment process used in growing a carbon filmSI DIAMOND TECHN INC·Filed 1999·Granted Oct 30, 2001·0 cites·3 claims
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