Inventor · disambiguated record
Kiichiro Mukai
Also filed as: MUKAI KIICHIRO
21 granted patents·1,396 citations·filing 1981–2000
97Inventor score
Top patents by PatentIndex Score
21 records- 0199US4857137AProcess for surface treatmentHITACHI LTD·Filed 1987·Granted Aug 15, 1989·520 cites·17 claims
- 0295US4897709ATitanium nitride film in contact hole with large aspect ratioHITACHI LTD·Filed 1988·Granted Jan 30, 1990·151 cites·12 claims
- 0395US4891684ASemiconductor deviceHITACHI LTD·Filed 1987·Granted Jan 2, 1990·84 cites·39 claims
- 0495US4599135AThin film depositionHITACHI LTD·Filed 1984·Granted Jul 8, 1986·82 cites·28 claims
- 0591US5292673AMethod of manufacturing a semiconductor deviceHITACHI LTD·Filed 1992·Granted Mar 8, 1994·99 cites·42 claims
- 0690US4365264ASemiconductor device with high density low temperature deposited Siw Nx Hy Oz passivating layerHITACHI LTD·Filed 1981·Granted Dec 21, 1982·91 cites·5 claims
- 0783US4636833ASemiconductor deviceHITACHI LTD·Filed 1984·Granted Jan 13, 1987·34 cites·24 claims
- 0877US4937650ASemiconductor capacitor device with dual dielectricHITACHI LTD·Filed 1988·Granted Jun 26, 1990·39 cites·18 claims
- 0976US5079191AProcess for producing a semiconductor deviceHITACHI LTD·Filed 1990·Granted Jan 7, 1992·39 cites·17 claims
- 1074US4956043ADry etching apparatusHITACHI LTD·Filed 1988·Granted Sep 11, 1990·46 cites·22 claims
- 1174US4943344AEtching methodHITACHI LTD·Filed 1989·Granted Jul 24, 1990·41 cites·7 claims
- 1263US4842891AMethod of forming a copper film by chemical vapor depositionHITACHI LTD·Filed 1988·Granted Jun 27, 1989·27 cites·11 claims
- 1360US5147500ADry etching methodHITACHI LTD·Filed 1990·Granted Sep 15, 1992·32 cites·16 claims
- 1459US6551765B1Coating apparatus, discharge device, and coating methodTOSHIBA KK·Filed 2000·Granted Apr 22, 2003·9 cites·2 claims
- 1556US5643473ADry etching methodHITACHI LTD·Filed 1995·Granted Jul 1, 1997·21 cites·11 claims
- 1654US5391915AIntegrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrateHITACHI LTD·Filed 1993·Granted Feb 21, 1995·22 cites·7 claims
- 1751US4926238ASemiconductor device and method for producing the sameHITACHI LTD·Filed 1988·Granted May 15, 1990·17 cites·25 claims
- 1848US5013526ASuperconducting alloys comprising tungsten, molybdenum, silicon and oxygenHITACHI LTD·Filed 1989·Granted May 7, 1991·13 cites·12 claims
- 1944US4570175AThree-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locationsHITACHI LTD·Filed 1983·Granted Feb 11, 1986·11 cites·3 claims
- 2042US4809052ASemiconductor memory deviceHITACHI LTD·Filed 1986·Granted Feb 28, 1989·7 cites·17 claims
- 2141US6747339B1Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrateHITACHI LTD·Filed 1994·Granted Jun 8, 2004·11 cites·63 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →