Inventor · disambiguated record
Yasushiro Nishioka
Also filed as: NISHIOKA YASUSHIRO
19 granted patents·976 citations·filing 1983–1998
97Inventor score
Top patents by PatentIndex Score
19 records- 0195US5489548AMethod of forming high-dielectric-constant material electrodes comprising sidewall spacersTEXAS INSTRUMENTS INC·Filed 1994·Granted Feb 6, 1996·201 cites·14 claims
- 0295US4891684ASemiconductor deviceHITACHI LTD·Filed 1987·Granted Jan 2, 1990·84 cites·39 claims
- 0393US5554564APre-oxidizing high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1994·Granted Sep 10, 1996·84 cites·21 claims
- 0491US5973911AFerroelectric thin-film capacitorTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 26, 1999·99 cites·5 claims
- 0591US5554866APre-oxidizing high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1995·Granted Sep 10, 1996·80 cites·18 claims
- 0683US5605858AMethod of forming high-dielectric-constant material electrodes comprising conductive sidewall spacers of same material as electrodesTEXAS INSTRUMENTS INC·Filed 1995·Granted Feb 25, 1997·55 cites·11 claims
- 0783US4636833ASemiconductor deviceHITACHI LTD·Filed 1984·Granted Jan 13, 1987·34 cites·24 claims
- 0879US5854499AFerroelectric film capacitor with intergranular insulationTEXAS INSTRUMENTS INC·Filed 1995·Granted Dec 29, 1998·39 cites·12 claims
- 0978US5811851APre-oxidizing high-dielectric-constant material electrodesTEXAS INSTRUMENTS INC·Filed 1996·Granted Sep 22, 1998·34 cites·20 claims
- 1077US5656852AHigh-dielectric-constant material electrodes comprising sidewall spacersTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 12, 1997·41 cites·14 claims
- 1177US4937650ASemiconductor capacitor device with dual dielectricHITACHI LTD·Filed 1988·Granted Jun 26, 1990·39 cites·18 claims
- 1276US5079191AProcess for producing a semiconductor deviceHITACHI LTD·Filed 1990·Granted Jan 7, 1992·39 cites·17 claims
- 1374US5635420AMethod of making a semiconductor device having a capacitive layerTEXAS INSTRUMENTS INC·Filed 1995·Granted Jun 3, 1997·35 cites·5 claims
- 1471US5970337AFerroelectric film capacitor with intergranular insulationTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 19, 1999·26 cites·15 claims
- 1566US5814888ASemiconductor device having a multilayer wiring and the method for fabricating the deviceTEXAS INSTRUMENTS INC·Filed 1997·Granted Sep 29, 1998·31 cites·18 claims
- 1664US6133163AMethod for forming a semiconductor multilayer interconnect device using SOG and polyimideTEXAS INSTRUMENTS INC·Filed 1996·Granted Oct 17, 2000·28 cites·6 claims
- 1744US4570175AThree-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locationsHITACHI LTD·Filed 1983·Granted Feb 11, 1986·11 cites·3 claims
- 1842US4809052ASemiconductor memory deviceHITACHI LTD·Filed 1986·Granted Feb 28, 1989·7 cites·17 claims
- 1937US5229333AMethod for improving the interface characteristics of CaF2 on siliconTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 20, 1993·9 cites·20 claims
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