Inventor · disambiguated record
William Budge
Also filed as: BUDGE WILLIAM · BUDGE WILLIAM S
21 granted patents·1 pending application·135 citations·filing 2000–2007
95Inventor score
Top patents by PatentIndex Score
22 records- 0184US7271463B2Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the baseMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 18, 2007·27 cites·37 claims
- 0284US7259079B2Methods for filling high aspect ratio trenches in semiconductor layersMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 21, 2007·11 cites·26 claims
- 0379US6368986B1Use of selective ozone TEOS oxide to create variable thickness layers and spacersMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 9, 2002·16 cites·7 claims
- 0477US7632737B2Protection in integrated circuitsMICRON TECHNOLOGY INC·Filed 2006·Granted Dec 15, 2009·6 cites·37 claims
- 0577US6617230B2Use of selective ozone teos oxide to create variable thickness layers and spacersMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 9, 2003·14 cites·19 claims
- 0676US6982207B2Methods for filling high aspect ratio trenches in semiconductor layersMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 3, 2006·20 cites·29 claims
- 0775US7273793B2Methods of filling gaps using high density plasma chemical vapor depositionMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 25, 2007·1 cites·19 claims
- 0874US7479440B2Method of forming an isolation structure that includes forming a silicon layer at a base of the recessMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 20, 2009·4 cites·24 claims
- 0968US6602807B2Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and offMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 5, 2003·9 cites·12 claims
- 1067US6503851B2Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and offMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 7, 2003·8 cites·56 claims
- 1166US7501691B2Trench insulation structures including an oxide liner and oxidation barrierMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 10, 2009·2 cites·21 claims
- 1262US7056833B2Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor depositionMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 6, 2006·3 cites·7 claims
- 1361US7202183B2Method of filling gaps and methods of depositing materials using high density plasma chemical vapor depositionMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 10, 2007·0 cites·5 claims
- 1459US7214979B2Selectively deposited silicon oxide layers on a silicon substrateMICRON TECHNOLOGY INC·Filed 2004·Granted May 8, 2007·4 cites·59 claims
- 1553US7521354B2Low k interlevel dielectric layer fabrication methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 21, 2009·0 cites·21 claims
- 1653US7494894B2Protection in integrated circuitsMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 24, 2009·4 cites·18 claims
- 1752US7078356B2Low K interlevel dielectric layer fabrication methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 18, 2006·2 cites·17 claims
- 1849US7067415B2Low k interlevel dielectric layer fabrication methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 27, 2006·1 cites·25 claims
- 1948US7192893B2Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and offMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 20, 2007·1 cites·68 claims
- 2045US7219114B2Fast approximation to the spherical linear interpolation functionPATENT PURCHASE MANAGER LLC·Filed 2002·Granted May 15, 2007·2 cites·14 claims
- 2142US7067414B1Low k interlevel dielectric layer fabrication methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 27, 2006·0 cites·13 claims
- 2242US2002098633A1Use of selective ozone TEOS oxide to create variable thickness layers and spacersFiled 2002·Application pending·0 cites
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