Inventor · disambiguated record
Jong-Mil Youn
Also filed as: YOUN JONG M · YOUN JONG-MIL
29 granted patents·4 pending applications·223 citations·filing 1988–2021
97Inventor score
Top patents by PatentIndex Score
33 records- 0197US9240411B1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 19, 2016·14 cites·30 claims
- 0296US9698264B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 4, 2017·12 cites·19 claims
- 0396US9515182B2High-integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 6, 2016·11 cites·29 claims
- 0496US9461173B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 4, 2016·10 cites·20 claims
- 0596US9048219B2High integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 2, 2015·20 cites·30 claims
- 0695US9502417B2Semiconductor device having a substrate including a first active region and a second active regionSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 22, 2016·8 cites·30 claims
- 0794US10084088B2Method for fabricating a semiconductor device having a first fin active pattern and a second fin active patternSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 25, 2018·7 cites·17 claims
- 0891US9922979B2Integrated circuit device and method of manufacturing the sameCHUNG JAE YUP·Filed 2016·Granted Mar 20, 2018·12 cites·20 claims
- 0991US9209184B2High-integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 8, 2015·5 cites·20 claims
- 1090US11575014B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 7, 2023·2 cites·19 claims
- 1189US10153270B2Electrostatic discharge protection devicesKANG DAE LIM·Filed 2015·Granted Dec 11, 2018·9 cites·20 claims
- 1289US10032886B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 24, 2018·8 cites·11 claims
- 1386US11011511B2Electrostatic discharge protection devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 18, 2021·3 cites·17 claims
- 1485US9478551B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 25, 2016·7 cites·20 claims
- 1574US11581435B2Semiconductor device including a first fin active region, a second fin active region and a field regionSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 14, 2023·0 cites·19 claims
- 1670US12074157B2Electrostatic discharge protection devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·10 claims
- 1766US10714614B2Semiconductor device including a first fin active region and a second fin active regionSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 14, 2020·0 cites·19 claims
- 1864US9929155B2Semiconductor device having symmetric and asymmetric active finsKIM JU YOUN·Filed 2015·Granted Mar 27, 2018·1 cites·20 claims
- 1961US7112831B2Ternary content addressable memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 26, 2006·12 cites·57 claims
- 2061US6147385ACMOS static random access memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 14, 2000·27 cites·23 claims
- 2159US9099336B2Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 4, 2015·1 cites·15 claims
- 2254US9048236B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 2, 2015·1 cites·18 claims
- 2349US5814538AMethods of forming BiCMOS devices having dual-layer emitter electrodes and thin-film transistors thereinSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 29, 1998·12 cites·14 claims
- 2445US2015364574A1Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2544US2019385915A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 2643US2008073717A1Semiconductor devices having substrate plug and methods of forming the sameHA TAE-HONG·Filed 2007·Application pending·0 cites
- 2741US5077226AManufacturing method for BiCMOS devicesSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Dec 31, 1991·9 cites·6 claims
- 2837US4950616AMethod for fabricating a BiCMOS deviceSAMSUNG ELECTRONICS CO LTD·Filed 1989·Granted Aug 21, 1990·8 cites·2 claims
- 2937US4912055AMethod of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1988·Granted Mar 27, 1990·7 cites·32 claims
- 3036US5173760ABiCMOS semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1990·Granted Dec 22, 1992·7 cites·3 claims
- 3135US6165900AMethod for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 26, 2000·4 cites·18 claims
- 3235US2016079241A1Integrated circuit device including blocking insulating layerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 3334US4970174AMethod for making a BiCMOS semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1988·Granted Nov 13, 1990·6 cites·36 claims
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