Inventor · disambiguated record
Leonardo Fragapane
Also filed as: FRAGAPANE LEONARDO
21 granted patents·5 pending applications·171 citations·filing 1998–2023
94Inventor score
Files withST MICROELECTRONICS SRL20MAGRI ANGELO2SGS THOMSON MICROELECTRONICS2CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO1
Top patents by PatentIndex Score
26 records- 0182US12308235B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2023·Granted May 20, 2025·0 cites·17 claims
- 0280US9515136B2Edge termination structure for a power integrated device and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2015·Granted Dec 6, 2016·3 cites·16 claims
- 0380US8637369B2Method for manufacturing an integrated power device having gate structures within trenchesMAGRI ANGELO·Filed 2012·Granted Jan 28, 2014·5 cites·20 claims
- 0478US11854809B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2022·Granted Dec 26, 2023·0 cites·18 claims
- 0576US11018008B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2018·Granted May 25, 2021·1 cites·20 claims
- 0674US6222248B1Electronic semiconductor power device with integrated diodeST MICROELECTRONICS SRL·Filed 2000·Granted Apr 24, 2001·20 cites·8 claims
- 0774US6169300B1Insulated gate bipolar transistor with high dynamic ruggednessSGS THOMSON MICROELECTRONICS·Filed 1998·Granted Jan 2, 2001·36 cites·24 claims
- 0874US5963407AOvervoltage protection device for the protection of a power transistor having a MOS control terminalSGS THOMSON MICROELECTRONICS·Filed 1998·Granted Oct 5, 1999·30 cites·21 claims
- 0973US9306029B2Electronic device comprising conductive regions and dummy regionsST MICROELECTRONICS SRL·Filed 2014·Granted Apr 5, 2016·3 cites·17 claims
- 1072US8664713B2Integrated power device on a semiconductor substrate having an improved trench gate structureMAGRI ANGELO·Filed 2009·Granted Mar 4, 2014·4 cites·39 claims
- 1171US11545362B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 1266USRE40222EElectronic semiconductor power device with integrated diodeST MICROELECTRONICS SRL·Filed 2003·Granted Apr 8, 2008·12 cites·15 claims
- 1365US7091559B2Junction electronic component and an integrated power device incorporating said componentST MICROELECTRONICS SRL·Filed 2004·Granted Aug 15, 2006·13 cites·26 claims
- 1463US7782637B2Switched-mode electronic power deviceST MICROELECTRONICS SRL·Filed 2007·Granted Aug 24, 2010·8 cites·29 claims
- 1560US7205607B2Semiconductor power device with insulated gate and trench-gate structure and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2004·Granted Apr 17, 2007·9 cites·14 claims
- 1659US6787881B2Integrated power device with improved efficiency and reduced overall dimensionsST MICROELECTRONICS SRL·Filed 2002·Granted Sep 7, 2004·9 cites·21 claims
- 1758US2024170568A1Silicon carbide integrated device and method for manufacturing an integrated deviceST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1855US6271061B1Fabrication of insulated gate bipolar devicesCONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO·Filed 1999·Granted Aug 7, 2001·18 cites·20 claims
- 1955US2024113179A1Sic-based electronic device with improved body-source coupling, and manufacturing methodST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 2053US9520468B2Integrated power device on a semiconductor substrate having an improved trench gate structureST MICROELECTRONICS SRL·Filed 2014·Granted Dec 13, 2016·0 cites·18 claims
- 2148US9461130B2Electronic device comprising conductive regions and dummy regionsST MICROELECTRONICS SRL·Filed 2015·Granted Oct 4, 2016·0 cites·15 claims
- 2247US9564541B2Diode with insulated anode regionsST MICROELECTRONICS SRL·Filed 2015·Granted Feb 7, 2017·0 cites·20 claims
- 2346US9419148B2Diode with insulated anode regionsST MICROELECTRONICS SRL·Filed 2015·Granted Aug 16, 2016·0 cites·15 claims
- 2438US2005139913A1Method for manufacturing a power device with insulated gate and trench-gate structure having controlled channel length and corresponding deviceFiled 2004·Application pending·0 cites
- 2536US2002113247A1Electronic device integrating an insulated gate bipolar transistor power device and a diode into a protective packageST MICROELECTRONICS SRL·Filed 2002·Application pending·0 cites
- 2631US2003006829A1Power device with integrated voltage stabilizing circuit and method for manufacturing the deviceST MICROELECTRONICS SRL·Filed 2002·Application pending·0 cites
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