Inventor · disambiguated record
You-Kuo Wu
Also filed as: WU YOU · WU YOU-KUO
16 granted patents·5 pending applications·74 citations·filing 2004–2022
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG10SYSTEM GENERAL CORP3HUANG CHIH-FENG2SEMICONDUCTOR MFG INT SHANGHAI CORP2CHIANG CHIU-CHIH1
Top patents by PatentIndex Score
21 records- 0180US10410986B2Semiconductor device and manufacture thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Sep 10, 2019·3 cites·6 claims
- 0278US7247909B2Method for forming an integrated circuit with high voltage and low voltage devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 24, 2007·7 cites·9 claims
- 0378US7129559B2High voltage semiconductor device utilizing a deep trench structureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 31, 2006·20 cites·9 claims
- 0476US7122876B2Isolation-region configuration for integrated-circuit transistorTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 17, 2006·22 cites·20 claims
- 0575US7482662B2High voltage semiconductor device utilizing a deep trench structureTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 27, 2009·5 cites·44 claims
- 0664US7994580B2High voltage transistor with improved driving currentTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 9, 2011·3 cites·16 claims
- 0763US8803544B2Integrated circuit chip and testing method capable of detecting connection errorKU CHIH-CHENG·Filed 2011·Granted Aug 12, 2014·2 cites·16 claims
- 0863US8268691B2High voltage transistor with improved driving currentTIEN WILLIAM WEI-YUAN·Filed 2011·Granted Sep 18, 2012·2 cites·17 claims
- 0963US7868422B2MOS device with a high voltage isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 11, 2011·3 cites·11 claims
- 1061US7384836B2Integrated circuit transistor insulating region fabrication methodTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 10, 2008·2 cites·17 claims
- 1159US7615976B2Switching circuit of power converter having voltage-clipping device to improve efficiencySYSTEM GENERAL CORP·Filed 2006·Granted Nov 10, 2009·5 cites·6 claims
- 1257US2025012757A1Direct current nanoelectronic sensorUNIV MICHIGAN REGENTS·Filed 2022·Application pending·0 cites
- 1354US10910332B2Semiconductor device and manufacture thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Granted Feb 2, 2021·0 cites·10 claims
- 1442US7911022B2Isolation structure in field deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 22, 2011·0 cites·14 claims
- 1542US7732890B2Integrated circuit with high voltage junction structureSYSTEM GENERAL CORP·Filed 2006·Granted Jun 8, 2010·0 cites·11 claims
- 1642US2009051019A1Multi-chip module packageHUANG CHIH-FENG·Filed 2007·Application pending·0 cites
- 1741US2012217657A1Multi-chip module packageHUANG CHIH-FENG·Filed 2012·Application pending·0 cites
- 1839US7655990B2Voltage-clipping device with high breakdown voltageSYSTEM GENERAL CORP·Filed 2006·Granted Feb 2, 2010·0 cites·18 claims
- 1938US8125008B2Schottky device and process of making the same comprising a geometry gapCHIANG CHIU-CHIH·Filed 2006·Granted Feb 28, 2012·0 cites·10 claims
- 2037US2007108517A1LDMOS with independently biased sourceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 2134US2006220179A1Method for forming an improved isolation junction in high voltage LDMOS structuresTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →