Inventor · disambiguated record
Shwu-Jen Jeng
Also filed as: JENG SHWU Y · JENG SHWU-JEN · JENG SHWU-JEN J
18 granted patents·4 pending applications·401 citations·filing 1991–2009
95Inventor score
Top patents by PatentIndex Score
22 records- 0194US5282925ADevice and method for accurate etching and removal of thin filmIBM·Filed 1992·Granted Feb 1, 1994·200 cites·48 claims
- 0288US6656809B2Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristicsIBM·Filed 2002·Granted Dec 2, 2003·40 cites·9 claims
- 0376US6787427B2Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristicsIBM·Filed 2003·Granted Sep 7, 2004·17 cites·11 claims
- 0473US6506656B2Stepped collector implant and method for fabricationIBM·Filed 2001·Granted Jan 14, 2003·18 cites·14 claims
- 0571US7253070B2Transistor structure with minimized parasitics and method of fabricating the sameIBM·Filed 2006·Granted Aug 7, 2007·3 cites·5 claims
- 0671US6927476B2Bipolar device having shallow junction raised extrinsic base and method for making the sameIBM·Filed 2001·Granted Aug 9, 2005·16 cites·34 claims
- 0769US7022246B2Method of fabrication of MIMCAP and resistor at same levelIBM·Filed 2003·Granted Apr 4, 2006·16 cites·5 claims
- 0868US6660664B1Structure and method for formation of a blocked silicide resistorIBM·Filed 2000·Granted Dec 9, 2003·9 cites·22 claims
- 0967US7075126B2Transistor structure with minimized parasitics and method of fabricating the sameIBM·Filed 2004·Granted Jul 11, 2006·9 cites·5 claims
- 1066US7491617B2Transistor structure with minimized parasitics and method of fabricating the sameIBM·Filed 2007·Granted Feb 17, 2009·2 cites·4 claims
- 1164US5286331ASupersonic molecular beam etching of surfacesIBM·Filed 1991·Granted Feb 15, 1994·31 cites·4 claims
- 1261US7642569B2Transistor structure with minimized parasitics and method of fabricating the sameIBM·Filed 2009·Granted Jan 5, 2010·1 cites·4 claims
- 1360US6531720B2Dual sidewall spacer for a self-aligned extrinsic base in SiGe heterojunction bipolar transistorsIBM·Filed 2001·Granted Mar 11, 2003·9 cites·3 claims
- 1457US5423940ASupersonic molecular beam etching of surfacesIBM·Filed 1993·Granted Jun 13, 1995·22 cites·21 claims
- 1550US7491623B2Method of making a semiconductor structureIBM·Filed 2007·Granted Feb 17, 2009·0 cites·16 claims
- 1646US8754446B2Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier materialCHEN XIAOMENG·Filed 2006·Granted Jun 17, 2014·0 cites·11 claims
- 1745US2007028978A1Innovative valve mechanism for detergent dispenserJENG SHWU Y·Filed 2005·Application pending·0 cites
- 1843US2005095787A1Structure and method for formation of a bipolar resistorIBM·Filed 2004·Application pending·0 cites
- 1940US2008157200A1Stress liner surrounded facetless embedded stressor mosfetIBM·Filed 2006·Application pending·0 cites
- 2037US8084788B2Method of forming source and drain of a field-effect-transistor and structure thereofHOLT JUDSON ROBERT·Filed 2008·Granted Dec 27, 2011·0 cites·13 claims
- 2134US2002197807A1Non-self-aligned SiGe heterojunction bipolar transistorIBM·Filed 2001·Application pending·0 cites
- 2233US5374481APolyemitter structure with improved interface controlIBM·Filed 1993·Granted Dec 20, 1994·8 cites·2 claims
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