Inventor · disambiguated record
Christian Eschbaumer
Also filed as: ESCHBAUMER CHRISTIAN
10 granted patents·2 pending applications·300 citations·filing 2002–2002
86Inventor score
Files withINFINEON TECHNOLOGIES AG10
Top patents by PatentIndex Score
12 records- 0196US6893972B2Process for sidewall amplification of resist structures and for the production of structures having reduced structure sizeINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 17, 2005·280 cites·12 claims
- 0262US6770423B2Negative resist process with simultaneous development and silylationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 3, 2004·7 cites·8 claims
- 0351US7052820B2Silicon-containing resist for photolithographyINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 30, 2006·3 cites·10 claims
- 0447US6946236B2Negative resist process with simultaneous development and aromatization of resist structuresINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 20, 2005·2 cites·8 claims
- 0545US7041426B2Photoresist based on polycondensates and having an increased resolution for use in 157 nanometer lithographyINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 9, 2006·1 cites·16 claims
- 0642US6806027B2Chemically amplified photoresist and process for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography through the use of fluorinated cinnamic acid derivativesINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 19, 2004·5 cites·14 claims
- 0735US6759184B2Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomersINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 6, 2004·2 cites·12 claims
- 0835US2003082483A1Chemically amplified photoresist and process for structuring substrates having resist copolymers with enhanced transparency resulting from fluorinating the photochemically cleavable leaving groups and being applicable to 157 nm photolithographyFiled 2002·Application pending·0 cites
- 0934US7045273B2Process for silylating photoresists in the UV rangeINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 16, 2006·0 cites·10 claims
- 1034US7033740B2Photoresists with reaction anchors for chemical consolidation of resist structures for exposures at 157 nmINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 25, 2006·0 cites·4 claims
- 1134US6974655B2Silicon resist for photolithography at short exposure wavelengths and process for making photoresistsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 13, 2005·0 cites·9 claims
- 1234US2003096194A1Silylating process for photoresists in the UV regionFiled 2002·Application pending·0 cites
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