Inventor · disambiguated record
Jane-Bai Lai
Also filed as: LAI JANE-BAI
9 granted patents·310 citations·filing 1998–2004
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG8
Top patents by PatentIndex Score
9 records- 0196US6136680AMethods to improve copper-fluorinated silica glass interconnectsTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 24, 2000·133 cites·35 claims
- 0287US6015749AMethod to improve adhesion between copper and titanium nitride, for copper interconnect structures, via the use of an ion implantation procedureTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 18, 2000·104 cites·18 claims
- 0359US6399487B1Method of reducing phase transition temperature by using silicon-germanium alloysTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 4, 2002·21 cites·14 claims
- 0458US7208415B2Plasma treatment method for electromigration reductionTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 24, 2007·8 cites·18 claims
- 0557US6753259B2Method of improving the bondability between Au wires and Cu bonding padsFiled 2001·Granted Jun 22, 2004·6 cites·6 claims
- 0653US6423625B1Method of improving the bondability between Au wires and Cu bonding padsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 23, 2002·15 cites·9 claims
- 0752US6780783B2Method of wet etching low dielectric constant materialsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 24, 2004·4 cites·14 claims
- 0850US6660655B2Method and solution for preparing SEM samples for low-K materialsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 9, 2003·3 cites·12 claims
- 0950US6083829AUse of a low resistivity Cu3 Ge interlayer as an adhesion promoter between copper and tin layersTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 4, 2000·16 cites·26 claims
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