Inventor
MATSUOKA FUMITOMO
JP20 patents
Patents
20 patentsUS5578518ANov 26, 1996
Method of manufacturing a trench isolation having round corners
TOSHIBA KK159 citations98
US5506168AApr 9, 1996
Method for manufacturing semiconductor device
TOSHIBA KK89 citations96
US6365472B1Apr 2, 2002
Semiconductor device and method of manufacturing the same
TOSHIBA KK32 citations92
US6333541B1Dec 25, 2001
MOSFET gate insulating films with oxynitride and oxide
TOSHIBA KK20 citations92
US5998849ADec 7, 1999
Semiconductor device having highly-doped source/drain regions with interior edges in a dislocation-free state
TOSHIBA KK17 citations92
US5677229AOct 14, 1997
Method for manufacturing semiconductor device isolation region
TOSHIBA KK22 citations92
US5640033AJun 17, 1997
MOSFET having fine gate electrode structure
TOSHIBA KK45 citations92
US5053349AOct 1, 1991
Method for interconnecting semiconductor devices
TOSHIBA KK23 citations92
US6248645B1Jun 19, 2001
Semiconductor device having buried-type element isolation structure and method of manufacturing the same
TOSHIBA KK38 citations91
US5462893AOct 31, 1995
Method of making a semiconductor device with sidewall etch stopper and wide through-hole having multilayered wiring structure
TOSHIBA KK17 citations82
US5543360AAug 6, 1996
Method of making a semiconductor device with sidewall etch stopper and wide through-hole having multilayered wiring structure
TOSHIBA KK8 citations74
US5365110ANov 15, 1994
Semiconductor device with multi-layered wiring structure
TOSHIBA KK16 citations73
US5084403AJan 28, 1992
Method of manufacturing a semiconductor device including connecting a monocrystalline aluminum wire
TOSHIBA KK10 citations73
US6388304B2May 14, 2002
Semiconductor device having buried-type element isolation structure and method of manufacturing the same
TOSHIBA KK11 citations72
US5521416AMay 28, 1996
Semiconductor device having gate electrode and impurity diffusion layer different in conductivity type and method of manufacturing the same
TOSHIBA KK7 citations71
US6699776B2Mar 2, 2004
MOSFET gate insulating film and method of manufacturing the same
TOSHIBA KK2 citations63
US6066543AMay 23, 2000
Method of manufacturing a gap filling for shallow trench isolation
TOSHIBA KK5 citations63
US6355982B2Mar 12, 2002
Semiconductor memory device having pairs of bit lines arranged on both sides of memory cells
TOSHIBA KK5 citations62
US5220182AJun 15, 1993
Semiconductor device having conductive sidewall structure between adjacent elements
TOSHIBA KK5 citations62
US5773344AJun 30, 1998
Semiconductor device having gate electrode and impurity diffusion layer different in conductivity type and method of manufacturing same
TOSHIBA KK1 citations49