Inventor · disambiguated record
Seiji Mizuniwa
Also filed as: MIZUNIWA SEIJI
10 granted patents·46 citations·filing 1983–2003
87Inventor score
Top patents by PatentIndex Score
10 records- 0148US6878202B2Method for growing single crystal of compound semiconductor and substrate cut out therefromHITACHI CABLE·Filed 2002·Granted Apr 12, 2005·2 cites·12 claims
- 0247US6409831B2Apparatus for fabricating single crystalHITACHI CABLE·Filed 2001·Granted Jun 25, 2002·3 cites·5 claims
- 0343US6290773B1Method and apparatus for fabricating single crystalHITACHI CABLE·Filed 1999·Granted Sep 18, 2001·9 cites·7 claims
- 0440US6043509ALight-emitting diode having moisture-proof characteristics and high output powerHITACHI CABLE·Filed 1998·Granted Mar 28, 2000·10 cites·4 claims
- 0540US4483735AManufacturing process of semi-insulating gallium arsenide single crystalHITACHI CABLE·Filed 1983·Granted Nov 20, 1984·6 cites·1 claims
- 0639US7175707B2P-type GaAs single crystal and its production methodHITACHI CABLE·Filed 2003·Granted Feb 13, 2007·0 cites·10 claims
- 0732US5965908AEpitaxial wafer and manufacturing method thereof as well as light-emitting diode with enhanced luminanceHITACH CABEL LTD·Filed 1997·Granted Oct 12, 1999·8 cites·8 claims
- 0831US5888843AMethod for making light-emitting diode having improved moisture resistance characteristicsHITACHI CABLE·Filed 1996·Granted Mar 30, 1999·4 cites·5 claims
- 0930US5007979AMethod of fabricating GaAs single crystalHITACHI CABLE·Filed 1990·Granted Apr 16, 1991·4 cites·36 claims
- 1024US6413791B1Epitaxial wafer and manufacturing method thereof as well as light-emitting diode with enhanced luminanceHITACHI CABLE·Filed 1999·Granted Jul 2, 2002·0 cites·2 claims
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