Inventor · disambiguated record
Masahide Inuishi
Also filed as: INUISHI MASAHIDE
22 granted patents·587 citations·filing 1986–1997
96Inventor score
Files withMITSUBISHI ELECTRIC CORP22
Top patents by PatentIndex Score
22 records- 0193US5146291AMIS device having lightly doped drain structureMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 8, 1992·91 cites·3 claims
- 0285US5258319AMethod of manufacturing a MOS type field effect transistor using an oblique ion implantation stepMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 2, 1993·95 cites·9 claims
- 0383US5183771AMethod of manufacturing lddfet having double sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 2, 1993·50 cites·11 claims
- 0481US5369297AField effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 29, 1994·57 cites·22 claims
- 0580US5217913AMethod of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 8, 1993·48 cites·4 claims
- 0671US5089865AMis semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Feb 18, 1992·29 cites·5 claims
- 0769US5648284AField effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 15, 1997·28 cites·7 claims
- 0866US4918500ASemiconductor device having trench capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Apr 17, 1990·21 cites·6 claims
- 0963US5446305ASemiconductor device with double structured wellMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 29, 1995·20 cites·2 claims
- 1062US5061975AMOS type field effect transistor having LDD structureMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 29, 1991·34 cites·8 claims
- 1156US5554876AField effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 10, 1996·19 cites·7 claims
- 1254US4702797AMethod of manufacturing semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Oct 27, 1987·16 cites·8 claims
- 1352US5258321AManufacturing method for semiconductor memory device having stacked trench capacitors and improved intercell isolationMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 2, 1993·15 cites·11 claims
- 1446US5536665AMethod of manufacturing a semiconductor device with double structured wellMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 16, 1996·11 cites·9 claims
- 1546US5200353AMethod of manufacturing a semiconductor device having trench capacitorMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 6, 1993·12 cites·10 claims
- 1645US6420763B1Semiconductor device having a retrograde well structure and method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 16, 2002·9 cites·27 claims
- 1742US5268321AMethod of making DRAM cell having improved radiation protectionMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Dec 7, 1993·7 cites·11 claims
- 1840US5023682ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jun 11, 1991·6 cites·17 claims
- 1940US4942448AStructure for isolating semiconductor components on an integrated circuit and a method of manufacturing thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jul 17, 1990·9 cites·33 claims
- 2033US5852327ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 22, 1998·7 cites·10 claims
- 2133US5166763AStatic type semiconductor memory device and method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 24, 1992·3 cites·11 claims
- 2230US5200918AStatic semiconductor memory with polysilicon source drain transistorsMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Apr 6, 1993·0 cites·6 claims
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