Inventor · disambiguated record
James Albert Kirchgessner
Also filed as: KIRCHGESSNER JAMES · KIRCHGESSNER JAMES A · Kirchgessner James Albert
27 granted patents·8 pending applications·122 citations·filing 1987–2024
95Inventor score
Top patents by PatentIndex Score
35 records- 0193US9786770B1Semiconductor device structure with non planar slide wallFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Oct 10, 2017·9 cites·14 claims
- 0285US7816221B2Dielectric ledge for high frequency devicesFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 19, 2010·12 cites·15 claims
- 0384US11018247B1Semiconductor device with a base link region and method thereforNXP USA INC·Filed 2019·Granted May 25, 2021·3 cites·23 claims
- 0484US8084786B2Silicided base structure for high frequency transistorsJOHN JAY P·Filed 2010·Granted Dec 27, 2011·7 cites·20 claims
- 0580US7803685B2Silicided base structure for high frequency transistorsFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Sep 28, 2010·7 cites·12 claims
- 0673US10825922B2Semiconductor device and method of manufacturing a semiconductor deviceNXP USA INC·Filed 2019·Granted Nov 3, 2020·1 cites·20 claims
- 0773US6461925B1Method of manufacturing a heterojunction BiCMOS integrated circuitMOTOROLA INC·Filed 2000·Granted Oct 8, 2002·22 cites·28 claims
- 0872US11817486B2Semiconductor device and method of making a semiconductor deviceNXP USA INC·Filed 2022·Granted Nov 14, 2023·0 cites·17 claims
- 0972US10269943B2Semiconductor device structure with non planar slide wallNXP USA INC·Filed 2017·Granted Apr 23, 2019·1 cites·12 claims
- 1070US7611955B2Method of forming a bipolar transistor and semiconductor component thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 3, 2009·4 cites·20 claims
- 1168US11569357B2Semiconductor device and method of making a semiconductor deviceNXP USA INC·Filed 2021·Granted Jan 31, 2023·0 cites·12 claims
- 1268US7442616B2Method of manufacturing a bipolar transistor and bipolar transistor thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 28, 2008·4 cites·20 claims
- 1367US8664698B2Bipolar transistor and method with recessed base electrodeJOHN JAY P·Filed 2011·Granted Mar 4, 2014·2 cites·18 claims
- 1462US9105678B2Semiconductor devices with recessed base electrodeJOHN JAY P·Filed 2014·Granted Aug 11, 2015·1 cites·19 claims
- 1561US12457784B2Semiconductor device with lateral base link regionNXP BV·Filed 2022·Granted Oct 28, 2025·0 cites·19 claims
- 1661US7084485B2Method of manufacturing a semiconductor component, and semiconductor component formed therebyFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 1, 2006·10 cites·21 claims
- 1759US7638386B2Integrated CMOS and bipolar devices method and structureFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Dec 29, 2009·2 cites·15 claims
- 1858US12501634B2Method for forming a transistor with a conductivity doped base structureNXP USA INC·Filed 2022·Granted Dec 16, 2025·0 cites·19 claims
- 1958US2025203987A1Semiconductor device with multiple device regions and method of fabrication thereforNXP USA INC·Filed 2023·Application pending·0 cites
- 2058US2025098189A1Bipolar transistor and method of making a bipolar transistorNXP BV·Filed 2024·Application pending·0 cites
- 2157US12132093B2Base silicide on monocrystalline base structuresNXP USA INC·Filed 2022·Granted Oct 29, 2024·0 cites·20 claims
- 2257US7932145B2Method of forming a bipolar transistor and semiconductor component thereofFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Apr 26, 2011·1 cites·20 claims
- 2356US11640975B2Silicided collector structureNXP USA INC·Filed 2021·Granted May 2, 2023·0 cites·17 claims
- 2456US2025254900A1Semiconductor device with monocrystalline extrinsic baseNXP BV·Filed 2024·Application pending·0 cites
- 2554US10763782B1Tunable inductorsNXP USA INC·Filed 2020·Granted Sep 1, 2020·0 cites·20 claims
- 2654US2024304707A1Sige hbt and methods of manufacturing the sameNXP BV·Filed 2024·Application pending·0 cites
- 2753US2024178304A1Semiconductor device with a monocrystalline extrinsic base and method thereforNXP BV·Filed 2022·Application pending·0 cites
- 2852US2024234552A1Method of manufacturing a silicon bipolar junction transistor, and a bjtNXP BV·Filed 2023·Application pending·0 cites
- 2951US11855173B2Transistor with monocrystalline base structuresNXP USA INC·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3047US5134082AMethod of fabricating a semiconductor structure having MOS and bipolar devicesMOTOROLA INC·Filed 1991·Granted Jul 28, 1992·16 cites·15 claims
- 3146US4927775AMethod of fabricating a high performance bipolar and MOS deviceMOTOROLA INC·Filed 1989·Granted May 22, 1990·12 cites·3 claims
- 3243US7821103B2Counter-doped varactor structure and methodFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 26, 2010·0 cites·21 claims
- 3341US2014147985A1Methods for the fabrication of semiconductor devices including sub-isolation buried layersFREESCALE SEMICONDUCTOR INC·Filed 2012·Application pending·0 cites
- 3435US2003234438A1Integrated circuit structure for mixed-signal RF applications and circuitsMOTOROLA INC·Filed 2002·Application pending·0 cites
- 3534US4803175AMethod of fabricating a bipolar semiconductor device with silicide contactsMOTOROLA INC·Filed 1987·Granted Feb 7, 1989·8 cites·14 claims
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