Inventor · disambiguated record
Chunhua Zhou
Also filed as: ZHOU CHUNHUA
40 granted patents·4 pending applications·165 citations·filing 2009–2024
96Inventor score
Files withINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD16INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD9EFFICIENT POWER CONVERSION CORP8INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD4CHEN JING3
Top patents by PatentIndex Score
44 records- 0194US8076699B2Integrated HEMT and lateral field-effect rectifier combinations, methods, and systemsCHEN JING·Filed 2009·Granted Dec 13, 2011·103 cites·17 claims
- 0291US8564020B2Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the sameCHEN JING·Filed 2010·Granted Oct 22, 2013·16 cites·28 claims
- 0389US11699899B2Electronic device and electrostatic discharge protection circuitINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Jul 11, 2023·2 cites·18 claims
- 0489US10096702B2Multi-step surface passivation structures and methods for fabricating sameEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Oct 9, 2018·7 cites·24 claims
- 0589US9837438B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2015·Granted Dec 5, 2017·6 cites·8 claims
- 0689US9214461B2GaN transistors with polysilicon layers for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·9 cites·12 claims
- 0787US12125845B2Electronic deviceINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Oct 22, 2024·2 cites·16 claims
- 0882US10312260B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·3 cites·17 claims
- 0982US9171911B2Isolation structure in gallium nitride devices and integrated circuitsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Oct 27, 2015·6 cites·26 claims
- 1080US8809987B2Normally-off III-nitride metal-2DEG tunnel junction field-effect transistorsCHEN JING·Filed 2010·Granted Aug 19, 2014·6 cites·20 claims
- 1176US11747390B2Apparatus and method for measuring dynamic on-resistance of GaN-based deviceINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·18 claims
- 1274US12218128B2Nitride-based semiconductor bidirectional switching device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Feb 4, 2025·0 cites·17 claims
- 1374US12199000B2Semiconductor device structures and methods of manufacturing the sameINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2024·Granted Jan 14, 2025·0 cites·14 claims
- 1474US12176343B2Nitride-based semiconductor bidirectional switching device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Dec 24, 2024·0 cites·20 claims
- 1574US12074159B2Nitride-based semiconductor bidirectional switching device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·17 claims
- 1674US12062653B2Nitride-based semiconductor bidirectional switching device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
- 1773US12087763B2Nitride-based semiconductor bidirectional switching device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·16 claims
- 1872US12482926B2Radiation element and bandwidth extension structureRFS TECH INC·Filed 2024·Granted Nov 25, 2025·0 cites·20 claims
- 1972US12125844B2Nitride-based semiconductor bidirectional switching device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Oct 22, 2024·0 cites·19 claims
- 2067US11967521B2Integrated semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
- 2166US11769826B2Semiconductor device with asymmetric gate structureINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2022·Granted Sep 26, 2023·0 cites·20 claims
- 2265US9583480B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONV CORP·Filed 2015·Granted Feb 28, 2017·1 cites·11 claims
- 2364US11967519B2Integrated semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 2462US11972996B2Semiconductor device structures and methods of manufacturing the sameINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Apr 30, 2024·0 cites·19 claims
- 2561US11984666B2Radiation element and bandwidth extension structureRFS TECH INC·Filed 2018·Granted May 14, 2024·1 cites·27 claims
- 2661US9214399B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·1 cites·20 claims
- 2760US11515409B2Semiconductor device with asymmetric gate structureINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·12 claims
- 2860US2022359454A1Nitride-based semiconductor module and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2022·Application pending·0 cites
- 2959US9331191B2GaN device with reduced output capacitance and process for making sameEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted May 3, 2016·1 cites·11 claims
- 3058US12255169B2Nitride-based semiconductor module and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Mar 18, 2025·0 cites·9 claims
- 3156US11784237B2Semiconductor devices and methods of manufacturing the sameINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2019·Granted Oct 10, 2023·0 cites·20 claims
- 3255US12040244B2Nitride semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Jul 16, 2024·0 cites·20 claims
- 3352US11862722B2Semiconductor device structures and methods of manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2020·Granted Jan 2, 2024·0 cites·11 claims
- 3451US2025072109A1Semiconductor device and method of manufacturing the sameINNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD·Filed 2022·Application pending·0 cites
- 3550US12289899B2Nitride-based semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Apr 29, 2025·0 cites·20 claims
- 3648US11747389B2Device and method for measuring high electron mobility transistorINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Sep 5, 2023·0 cites·3 claims
- 3747US12166114B2Semiconductor device structures and methods of manufacturing the sameINNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
- 3847US12040394B2Semiconductor device having improved gate leakage currentINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Jul 16, 2024·0 cites·20 claims
- 3947US2024055509A1Nitride-based semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Application pending·0 cites
- 4046US9214528B2Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuitsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·0 cites·22 claims
- 4145US11830786B2Semiconductor package and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2020·Granted Nov 28, 2023·0 cites·20 claims
- 4245US2022376038A1Semiconductor device structures and methods of manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2020·Application pending·0 cites
- 4343US12264582B2In-situ stress measurement device and method for ultra-deep non-vertical drillingCHANGJING RIVER SCIENT RESEARCH INSTITUTE·Filed 2024·Granted Apr 1, 2025·0 cites·8 claims
- 4440US12038469B2System and method for measuring intermittent operating life of GaN-based deviceINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Jul 16, 2024·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →