Inventor · disambiguated record
Vincent L. Rideout
Also filed as: RIDEOUT VINCENT L · RIDEOUT VINCENT LEO
10 granted patents·325 citations·filing 1976–1980
92Inventor score
Files withIBM10
Top patents by PatentIndex Score
10 records- 0195US4075045AMethod for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating stepsIBM·Filed 1976·Granted Feb 21, 1978·78 cites·25 claims
- 0292US4085498AFabrication of integrated circuits containing enhancement-mode FETs and depletion-mode FETs with two layers of polycrystalline silicon utilizing five basic pattern delineating stepsIBM·Filed 1976·Granted Apr 25, 1978·49 cites·26 claims
- 0384US4160987AField effect transistors with polycrystalline silicon gate self-aligned to both conductive and non-conductive regions and fabrication of integrated circuits containing the transistorsIBM·Filed 1977·Granted Jul 10, 1979·29 cites·44 claims
- 0482US4144101AProcess for providing self-aligned doping regions by ion-implantation and lift-offIBM·Filed 1978·Granted Mar 13, 1979·41 cites·17 claims
- 0578US4183040AMOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodesIBM·Filed 1978·Granted Jan 8, 1980·33 cites·7 claims
- 0670US4182636AMethod of fabricating self-aligned contact viasIBM·Filed 1978·Granted Jan 8, 1980·25 cites·16 claims
- 0767US4035198AMethod of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistorsIBM·Filed 1976·Granted Jul 12, 1977·21 cites·25 claims
- 0858US4240845AMethod of fabricating random access memory deviceIBM·Filed 1980·Granted Dec 23, 1980·25 cites·6 claims
- 0954US4090289AMethod of fabrication for field effect transistors (FETs) having a common channel stopper and FET channel doping with the channel stopper doping self-aligned to the dielectric isolation between FETSIBM·Filed 1976·Granted May 23, 1978·14 cites·14 claims
- 1041US4219834AOne-device monolithic random access memory and method of fabricating sameIBM·Filed 1977·Granted Aug 26, 1980·10 cites·3 claims
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