Inventor · disambiguated record
Iwao Kunishima
Also filed as: KUNISHIMA IWAO
38 granted patents·16 pending applications·1,237 citations·filing 1989–2025
98Inventor score
Top patents by PatentIndex Score
54 records- 0197US6611014B1Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereofTOSHIBA KK·Filed 2000·Granted Aug 26, 2003·167 cites·31 claims
- 0296US5990507ASemiconductor device having ferroelectric capacitor structuresTOSHIBA KK·Filed 1997·Granted Nov 23, 1999·229 cites·7 claims
- 0390US8953359B2Semiconductor memory deviceTOSHIBA KK·Filed 2013·Granted Feb 10, 2015·11 cites·18 claims
- 0490US6982453B2Semicondutor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Jan 3, 2006·49 cites·1 claims
- 0589US7348617B2Semiconductor deviceTOSHIBA KK·Filed 2005·Granted Mar 25, 2008·14 cites·1 claims
- 0688US5162263ASemiconductor device having salicide structure, method of manufacturing the same, and heating apparatusTOSHIBA KK·Filed 1991·Granted Nov 10, 1992·101 cites·12 claims
- 0787US6611015B2Semiconductor device including dummy upper electrodeTOSHIBA KK·Filed 2001·Granted Aug 26, 2003·29 cites·29 claims
- 0887US5861675ASemiconductor device having WNF film and method of manufacturing such a deviceTOSHIBA KK·Filed 1997·Granted Jan 19, 1999·86 cites·23 claims
- 0986US9324406B2Semiconductor memory deviceTOSHIBA KK·Filed 2015·Granted Apr 26, 2016·7 cites·15 claims
- 1086US6982444B2Ferroelectric memory device having a hydrogen barrier filmTOSHIBA KK·Filed 2003·Granted Jan 3, 2006·30 cites·12 claims
- 1186US5316977AMethod of manufacturing a semiconductor device comprising metal silicideTOSHIBA KK·Filed 1992·Granted May 31, 1994·56 cites·13 claims
- 1286US4923715AMethod of forming thin film by chemical vapor depositionTOSHIBA KK·Filed 1989·Granted May 8, 1990·50 cites·17 claims
- 1385US6190957B1Method of forming a ferroelectric deviceTOSHIBA KK·Filed 1999·Granted Feb 20, 2001·70 cites·13 claims
- 1483US7446362B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Nov 4, 2008·8 cites·1 claims
- 1582US7339218B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Mar 4, 2008·23 cites·7 claims
- 1680US7402858B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jul 22, 2008·6 cites·1 claims
- 1780US7022531B2Semiconductor memory device and method of fabricating the sameTOSHIBA KK·Filed 2003·Granted Apr 4, 2006·18 cites·2 claims
- 1879US6018185ASemiconductor device with element isolation filmTOSHIBA KK·Filed 1997·Granted Jan 25, 2000·57 cites·11 claims
- 1979US5721175AMethod of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1993·Granted Feb 24, 1998·37 cites·12 claims
- 2077US6586790B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 1999·Granted Jul 1, 2003·32 cites·10 claims
- 2176US7573084B2Non-volatile semiconductor memory device and method for fabricating the sameTOSHIBA KK·Filed 2007·Granted Aug 11, 2009·6 cites·20 claims
- 2275US6680499B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Jan 20, 2004·20 cites·18 claims
- 2373US7400005B2Semiconductor memory device having ferroelectric capacitors with hydrogen barriersTOSHIBA KK·Filed 2005·Granted Jul 15, 2008·5 cites·12 claims
- 2471US7429508B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Sep 30, 2008·3 cites·10 claims
- 2571US5168332ASemiconductor device having salicide structure, method of manufacturing the same, and heating apparatusTOSHIBA KK·Filed 1990·Granted Dec 1, 1992·41 cites·4 claims
- 2669US10559750B2Nonvolatile memory device and method of manufacturing the sameTOSHIBA KK·Filed 2018·Granted Feb 11, 2020·1 cites·14 claims
- 2769US6121649ASemiconductor device with ferroelectric capacitorsTOSHIBA KK·Filed 1999·Granted Sep 19, 2000·28 cites·7 claims
- 2869US2025169054A1Memory device using semiconductor elementUNISANTIS ELECT SINGAPORE PTE·Filed 2024·Application pending·0 cites
- 2969US2025386485A1Memory device using semiconductor devicesUNISANTIS ELECT SINGAPORE PTE·Filed 2025·Application pending·0 cites
- 3065US10153429B2Memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Dec 11, 2018·2 cites·11 claims
- 3163US2025006637A1Three-dimensional laminated memory device using semiconductor elementUNISANTIS ELECT SINGAPORE PTE·Filed 2024·Application pending·0 cites
- 3261US9384829B2Memory deviceTOSHIBA KK·Filed 2013·Granted Jul 5, 2016·2 cites·8 claims
- 3361US6140247ASemiconductor device manufacturing methodTOSHIBA KK·Filed 1996·Granted Oct 31, 2000·26 cites·18 claims
- 3459US7095068B2Semiconductor memory device having ferroelectric capacitor and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Aug 22, 2006·7 cites·27 claims
- 3556US7214982B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted May 8, 2007·6 cites·12 claims
- 3649US2021202839A1Stacked structure and method of manufacturing same, and semiconductor deviceAIST·Filed 2019·Application pending·0 cites
- 3748US6967367B2Ferro-electric memory device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Nov 22, 2005·3 cites·6 claims
- 3847US2008173912A1Semiconductor deviceKUMURA YOSHINORI·Filed 2007·Application pending·0 cites
- 3946US2006017086A1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2005·Application pending·0 cites
- 4045US7612398B2Semiconductor storage device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Nov 3, 2009·2 cites·6 claims
- 4145US6972990B2Ferro-electric memory device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Dec 6, 2005·2 cites·10 claims
- 4245US2006175645A1Semiconductor device and its manufacturing methodKANAYA HIROYUKI·Filed 2006·Application pending·0 cites
- 4345US2010012994A1Semiconductor storage deviceTOSHIBA KK·Filed 2009·Application pending·0 cites
- 4445US2008135901A1Semiconductor memory and method of manufacturing the sameSHIMOJO YOSHIRO·Filed 2007·Application pending·0 cites
- 4544US7763920B2Semiconductor memory having ferroelectric capacitorTOSHIBA KK·Filed 2007·Granted Jul 27, 2010·0 cites·10 claims
- 4643US2008230818A1Non-volatile memory deviceTOSHIBA KK·Filed 2008·Application pending·0 cites
- 4742US7312488B2Semiconductor storage device and manufacturing method for the sameTOSHIBA KK·Filed 2005·Granted Dec 25, 2007·0 cites·14 claims
- 4842US2008067567A1Semiconductor deviceTOSHIBA KK·Filed 2007·Application pending·0 cites
- 4941US2006208283A1Semiconductor deviceTOSHIBA KK·Filed 2005·Application pending·0 cites
- 5041US2007272959A1Ferroelectric memory cell and manufacturing method thereofHIDAKA OSAMU·Filed 2007·Application pending·0 cites
Showing the top 50 of 54 patent records by PatentIndex Score.
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