Inventor · disambiguated record
Kun-Ming Huang
Also filed as: HUANG KUN · HUANG KUN-MING
48 granted patents·8 pending applications·526 citations·filing 2000–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD31TAIWAN SEMICONDUCTOR MFG10SILICONWARE PRECISION INDUSTRIES CO LTD3SONIX TECH CO LTD3OSRAM SYLVANIA INC2
Top patents by PatentIndex Score
56 records- 0196US12002774B2Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
- 0296US11444046B2Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
- 0395US11374107B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·3 cites·19 claims
- 0495US6682211B2Replaceable LED lamp capsuleOSRAM SYLVANIA INC·Filed 2001·Granted Jan 27, 2004·237 cites·19 claims
- 0594US10312207B2Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·7 cites·20 claims
- 0694US9941384B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 10, 2018·8 cites·20 claims
- 0794US7150553B2Replaceable LED lamp capsuleOSRAM SYLVANIA INC·Filed 2003·Granted Dec 19, 2006·128 cites·21 claims
- 0891US2025343181A1Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0988US12424573B2Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 1088US10804231B2Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·3 cites·20 claims
- 1183US12100754B2Semiconductor arrangement and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 24, 2024·1 cites·20 claims
- 1280US9853121B2Method of fabricating a lateral insulated gate bipolar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 26, 2017·3 cites·20 claims
- 1380US9209102B2Passivation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 8, 2015·3 cites·20 claims
- 1479US12027603B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 1579US9882046B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·2 cites·19 claims
- 1679US8884405B2Passivation schemeCHUANG CHENG-CHI·Filed 2012·Granted Nov 11, 2014·6 cites·20 claims
- 1778US9312348B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·3 cites·20 claims
- 1877US6479376B1Process improvement for the creation of aluminum contact bumpsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 12, 2002·29 cites·16 claims
- 1976US9698024B2Partial SOI on power device for breakdown voltage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 4, 2017·3 cites·20 claims
- 2075US11901433B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·20 claims
- 2175US7221039B2Thin film transistor (TFT) device structure employing silicon rich silicon oxide passivation layerTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 22, 2007·21 cites·6 claims
- 2274US8246214B2Lamp holderHUANG KUN-MING·Filed 2010·Granted Aug 21, 2012·3 cites·11 claims
- 2371US8779555B2Partial SOI on power device for breakdown voltage improvementTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 15, 2014·2 cites·9 claims
- 2471US7109090B1Pyramid-shaped capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 19, 2006·4 cites·12 claims
- 2571US6294409B1Method of forming a constricted-mouth dimple structure on a leadframe die padSILICONWARE PREC IND CO L·Filed 2000·Granted Sep 25, 2001·26 cites·5 claims
- 2670US11233121B2Method of making bipolar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 2769US9608060B2Isolation structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 28, 2017·2 cites·18 claims
- 2868US7888767B2Structures of high-voltage MOS devices with improved electrical performanceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 15, 2011·4 cites·18 claims
- 2967US9647065B2Bipolar transistor structure having split collector region and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 9, 2017·1 cites·20 claims
- 3065US10840371B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 3164US6414379B1Structure of disturbing plate having down setSILICONWARE PRECISION INDUSTRIES CO LTD·Filed 2000·Granted Jul 2, 2002·17 cites·8 claims
- 3263US10686054B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·0 cites·20 claims
- 3362US10134867B2Method for fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 20, 2018·0 cites·20 claims
- 3462US9111898B2Multiple layer substrateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 18, 2015·1 cites·20 claims
- 3562US9076837B2Lateral insulated gate bipolar transistor structure with low parasitic BJT gain and stable threshold voltageLIN LONG-SHIH·Filed 2012·Granted Jul 7, 2015·2 cites·20 claims
- 3660US10461183B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 3760US2024371987A1Semiconductor arrangement and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3859US10049956B2Passivation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 3957US10686036B2Method of making bipolar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 16, 2020·0 cites·20 claims
- 4056US7183171B2Pyramid-shaped capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 27, 2007·2 cites·14 claims
- 4154US9761504B2Passivation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·0 cites·20 claims
- 4251US9093520B2High-voltage super junction by trench and epitaxial dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 28, 2015·0 cites·12 claims
- 4350US10002761B2Method for forming a multiple layer epitaxial layer on a waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 19, 2018·0 cites·20 claims
- 4448US9558986B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 31, 2017·0 cites·14 claims
- 4548US2025267707A1Data transmission method, device and systemSONIX TECH CO LTD·Filed 2025·Application pending·0 cites
- 4646US9614031B2Methods for forming a high-voltage super junction by trench and epitaxial dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·0 cites·20 claims
- 4746US9609378B2IP camera, communication method and communication systemSONIX TECH CO LTD·Filed 2014·Granted Mar 28, 2017·0 cites·12 claims
- 4844US9564515B2Semiconductor device having super junction structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 7, 2017·0 cites·19 claims
- 4941US8975153B2Super junction trench metal oxide semiconductor device and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 10, 2015·0 cites·19 claims
- 5037US2005242444A1Integrated circuit having a strengthened passivation structureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →