Inventor · disambiguated record
Sang-Kyu Kang
Also filed as: KANG SANG KYU
19 granted patents·6 pending applications·337 citations·filing 2000–2024
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD10KANG SANG KYU4GAN SEMICONDUCTOR INC2CHU DONG HO1DAESUNG M-TECH CO LTD1
Top patents by PatentIndex Score
25 records- 0197US7906787B2Nitride micro light emitting diode with high brightness and method for manufacturing the sameKANG SANG-KYU·Filed 2009·Granted Mar 15, 2011·199 cites·1 claims
- 0290US6372041B1Method and apparatus for single crystal gallium nitride (GaN) bulk synthesisGAN SEMICONDUCTOR INC·Filed 2000·Granted Apr 16, 2002·71 cites·12 claims
- 0389US10446765B2Heterocyclic compound and organic light emitting element using sameHEESUNG MAT LTD·Filed 2015·Granted Oct 15, 2019·5 cites·14 claims
- 0488US10559550B2Memory device including heterogeneous volatile memory chips and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·9 cites·17 claims
- 0587US9905288B2Semiconductor memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 27, 2018·8 cites·20 claims
- 0683US10186304B2Memory device and a clock distribution method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 22, 2019·4 cites·20 claims
- 0775US6407409B2Method and apparatus for single crystal gallium nitride (GAN) bulk synthesisGAN SEMICONDUCTOR INC·Filed 2001·Granted Jun 18, 2002·20 cites·34 claims
- 0871US10109344B2Semiconductor memory devices with banks with different numbers of memory cells coupled to their bit-lines and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 23, 2018·3 cites·15 claims
- 0970US9036406B2Magneto-resistive memory device including source line voltage generatorKIM HYE-JIN·Filed 2013·Granted May 19, 2015·4 cites·23 claims
- 1069US12431183B2Semiconductor memory device and memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 1164US8726659B2Intake system of engineCHU DONG HO·Filed 2011·Granted May 20, 2014·2 cites·5 claims
- 1264US7595511B2Nitride micro light emitting diode with high brightness and method of manufacturing the sameKANG SANG-KYU·Filed 2003·Granted Sep 29, 2009·12 cites·3 claims
- 1363US12449983B2Memory system reducing standby power and method for reducing standby power thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 1459US11869569B2Semiconductor memory device and memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 1558US2025224901A1Volatile memory, system on chip and electronic device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1655US12393351B2Memory device, memory system and method for operating memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·19 claims
- 1748US2005190932A1Streophonic apparatus having multiple switching function and an apparatus for controlling sound signalFiled 2003·Application pending·0 cites
- 1845US10501403B2Method for preparation of (S)-N1-(2-aminoethyl)-3-(4-alkoxyphenyl)propane-1,2-diamine trihydrochlorideST PHARM CO LTD·Filed 2017·Granted Dec 10, 2019·0 cites·20 claims
- 1945US10267273B2Variable intake systemHYUNDAI MOTOR CO LTD·Filed 2015·Granted Apr 23, 2019·0 cites·10 claims
- 2036US8325544B2Synchronous dynamic random access memory semiconductor device for controlling output dataKANG SANG-KYU·Filed 2010·Granted Dec 4, 2012·0 cites·13 claims
- 2136US2012073287A1Turbocharger having anti-surge valveKANG SANG KYU·Filed 2010·Application pending·0 cites
- 2234US9620193B2Semiconductor memory devices, memory systems including refresh control circuit and method of performing weak refresh operation on the weak pages thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 11, 2017·0 cites·18 claims
- 2332US2017111728A1Bone conduction speaker module and bone conduction earphones having bone conduction speaker modulesDAESUNG M-TECH CO LTD·Filed 2015·Application pending·0 cites
- 2432US2003134493A1Method for doping Gallium Nitride (GaN) substrates and the resulting doped gan substrateFiled 2002·Application pending·0 cites
- 2527US2010232213A1Control signal transmitting system of a semiconductor deviceHWANG HYONG-RYOL·Filed 2010·Application pending·0 cites
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