Inventor · disambiguated record
Michael Mutch
Also filed as: MUTCH MICHAEL
15 granted patents·4 pending applications·11 citations·filing 2018–2024
86Inventor score
Files withMICRON TECHNOLOGY INC19
Top patents by PatentIndex Score
19 records- 0193US11170834B2Memory cells and methods of forming a capacitor including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 9, 2021·9 cites·16 claims
- 0283US2024379739A1Devices comprising crystalline materialsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0381US12057472B2Devices comprising crystalline materialsMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 6, 2024·0 cites·19 claims
- 0480US2025089318A1Transistor and Methods of Forming TransistorsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0575US12191354B2Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetweenMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 7, 2025·0 cites·7 claims
- 0675US10886130B2Methods of forming crystalline semiconductor material, and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2018·Granted Jan 5, 2021·2 cites·47 claims
- 0771US11532699B2Devices comprising crystalline materials and related systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 0868US11728387B2Semiconductor devices comprising continuous crystalline structures, and related memory devices and systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 15, 2023·0 cites·23 claims
- 0968US11417730B2Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regionsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 16, 2022·0 cites·6 claims
- 1066US11695071B2Transistor and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 4, 2023·0 cites·26 claims
- 1165US11735416B2Electronic devices comprising crystalline materials and related memory devices and systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 22, 2023·0 cites·19 claims
- 1263US10707298B2Methods of forming semiconductor structuresMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 7, 2020·0 cites·18 claims
- 1363US2025159912A1Apparatus including bottom electrodes comprising oxygen-doped titanium nitride materials and related electronic devices and methods of forming the electronic devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1462US11935574B2Memory cells and methods of forming a capacitor including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 19, 2024·0 cites·13 claims
- 1558US11018229B2Methods of forming semiconductor structuresMICRON TECHNOLOGY INC·Filed 2018·Granted May 25, 2021·0 cites·18 claims
- 1657US10964811B2Transistor and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 30, 2021·0 cites·22 claims
- 1756US10790145B2Methods of forming crystallized materials from amorphous materialsMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 29, 2020·0 cites·14 claims
- 1855US2024234482A9Microelectronic devices including capacitors, and related electronic systems and methodsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 1948US11587938B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 21, 2023·0 cites·53 claims
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