Inventor · disambiguated record
Gunnar Leibiger
Also filed as: LEIBIGER GUNNAR
9 granted patents·4 pending applications·11 citations·filing 2006–2022
81Inventor score
Top patents by PatentIndex Score
13 records- 0179US9461121B2Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as suchFREIBERGER COMPOUND MAT GMBH·Filed 2014·Granted Oct 4, 2016·4 cites·18 claims
- 0264US12168839B2Growth of A-B crystals without crystal lattice curvatureFREIBERGER COMPOUND MAT GMBH·Filed 2020·Granted Dec 17, 2024·0 cites·13 claims
- 0362US8048224B2Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrateFREIBERGER COMPOUND MAT GMBH·Filed 2007·Granted Nov 1, 2011·3 cites·21 claims
- 0461US10662549B2Growth of A-B crystals without crystal lattice curvatureFREIBERGER COMPOUND MAT GMBH·Filed 2016·Granted May 26, 2020·0 cites·19 claims
- 0561US7585772B2Process for smoothening III-N substratesFREIBERGER COMPOUND MAT GMBH·Filed 2007·Granted Sep 8, 2009·2 cites·12 claims
- 0657US2022325435A1Growth of a-b crystals without crystal lattice curvatureFREIBERGER COMPOUND MAT GMBH·Filed 2022·Application pending·0 cites
- 0756US8778078B2Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as suchSCHOLZ FERDINAND·Filed 2007·Granted Jul 15, 2014·1 cites·25 claims
- 0851US9074297B2Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxyLEIBIGER GUNNAR·Filed 2008·Granted Jul 7, 2015·1 cites·19 claims
- 0950US2008203408A1PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALSFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 1050US2008203409A1PROCESS FOR PRODUCING (Al, Ga)N CRYSTALSFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 1143US8415766B2Process for smoothening III-N substratesHOELZIG STEFAN·Filed 2009·Granted Apr 9, 2013·0 cites·11 claims
- 1242US9856579B2Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxyLEIBIGER GUNNAR·Filed 2011·Granted Jan 2, 2018·0 cites·11 claims
- 1342US2007141814A1Process for producing a free-standing iii-n layer, and free-standing iii-n substrateFREIBERGER COMPOUND MAT GMBH·Filed 2006·Application pending·0 cites
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