Inventor · disambiguated record
Hisao Matsutera
Also filed as: MATSUTERA HISAO
11 granted patents·347 citations·filing 1998–2005
92Inventor score
Files withNEC CORP11
Top patents by PatentIndex Score
11 records- 0193US6542342B1Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layerNEC CORP·Filed 1999·Granted Apr 1, 2003·69 cites·1 claims
- 0289US6950290B2Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layerNEC CORP·Filed 2002·Granted Sep 27, 2005·21 cites·18 claims
- 0388US7126201B2Magnetic random access memoryNEC CORP·Filed 2003·Granted Oct 24, 2006·35 cites·6 claims
- 0487US6333842B1Magneto-resistance effect type composite head and production method thereofNEC CORP·Filed 1998·Granted Dec 25, 2001·49 cites·23 claims
- 0586US6490139B1Magneto-resistive element and magnetic head for data writing/readingNEC CORP·Filed 2000·Granted Dec 3, 2002·33 cites·11 claims
- 0682US7372673B2Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layerNEC CORP·Filed 2005·Granted May 13, 2008·7 cites·5 claims
- 0779US6341053B1Magnetic tunnel junction elements and their fabrication methodNEC CORP·Filed 1998·Granted Jan 22, 2002·81 cites·13 claims
- 0876US7068536B2Magnetic random access memory, and production method thereforNEC CORP·Filed 2003·Granted Jun 27, 2006·23 cites·17 claims
- 0972US6639766B2Magneto-resistance effect type composite head and production method thereofNEC CORP·Filed 2001·Granted Oct 28, 2003·8 cites·13 claims
- 1065US6174736B1Method of fabricating ferromagnetic tunnel junction deviceNEC CORP·Filed 1998·Granted Jan 16, 2001·17 cites·14 claims
- 1144US7099184B2Magnetic random access memoryNEC CORP·Filed 2003·Granted Aug 29, 2006·4 cites·32 claims
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