Inventor · disambiguated record
Jae-Seung Hwang
Also filed as: HWANG JAE S · HWANG JAE-SEUNG
25 granted patents·13 pending applications·271 citations·filing 1987–2012
95Inventor score
Top patents by PatentIndex Score
38 records- 0194US6483146B2Nonvolatile semiconductor memory device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 19, 2002·80 cites·15 claims
- 0288US7745290B2Methods of fabricating semiconductor device including fin-fetSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·15 cites·12 claims
- 0385US7723191B2Method of manufacturing semiconductor device having buried gateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 25, 2010·14 cites·20 claims
- 0482US6642107B2Non-volatile memory device having self-aligned gate structure and method of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 4, 2003·30 cites·39 claims
- 0581US6583008B2Nonvolatile semiconductor memory device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 24, 2003·24 cites·20 claims
- 0679US8158445B2Methods of forming pattern structures and methods of manufacturing semiconductor devices using the sameRYU YONG-HWAN·Filed 2010·Granted Apr 17, 2012·7 cites·19 claims
- 0779US7749902B2Methods of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·8 cites·30 claims
- 0876US6743695B2Shallow trench isolation method and method for manufacturing non-volatile memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 1, 2004·23 cites·13 claims
- 0975US7667221B2Phase change memory devices and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 23, 2010·11 cites·20 claims
- 1075US6617232B2Method of forming wiring using a dual damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 9, 2003·23 cites·23 claims
- 1171US7452773B2Method of manufacturing a flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·5 cites·20 claims
- 1270US7534704B2Thin layer structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·5 cites·17 claims
- 1365US2007210334A1Phase change memory device and method of fabricating the sameLIM YOUNG-SOO·Filed 2007·Application pending·0 cites
- 1462US8241512B2Ion implantation mask forming methodLEE YONG-WOO·Filed 2008·Granted Aug 14, 2012·1 cites·11 claims
- 1562US7452807B2Method of forming a metal wiring in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·1 cites·20 claims
- 1661US8216944B2Methods of forming patterns in semiconductor devicesKWON YONG-HYUN·Filed 2010·Granted Jul 10, 2012·1 cites·9 claims
- 1759US7659162B2Phase change memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 9, 2010·1 cites·14 claims
- 1858US6897153B2Etching gas composition for silicon oxide and method of etching silicon oxide using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 24, 2005·6 cites·21 claims
- 1954US6825121B2Method of manufacturing a capacitor of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 30, 2004·5 cites·21 claims
- 2052US7989279B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 2, 2011·0 cites·8 claims
- 2149US8361849B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 29, 2013·0 cites·8 claims
- 2246US7531450B2Method of fabricating semiconductor device having contact hole with high aspect-ratioSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 12, 2009·0 cites·20 claims
- 2345US7001692B2Method of forming a mask having nitride filmSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 21, 2006·1 cites·37 claims
- 2445US6815335B2Method for forming a contact in a semiconductor processSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·2 cites·32 claims
- 2545US2005161640A1Etching gas composition for silicon oxide and method of etching silicon oxide using the sameFiled 2005·Application pending·0 cites
- 2645US2008113515A1Methods of Forming Semiconductor DevicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2745US2007166870A1Method of forming a phase-changeable structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2844US2008191288A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2942US2009020816A1Semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3040US2007004140A1Method of manufacturing a non-volatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3139US2005045968A1Semiconductor device with borderless contact structure and method of manufacturing the sameFiled 2004·Application pending·0 cites
- 3238US2006030103A1Semiconductor device and method of manufacturing the sameKWON SUNG-UN·Filed 2005·Application pending·0 cites
- 3337US2002190316A1Semiconductor device with borderless contact structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Application pending·0 cites
- 3437US2006017093A1Semiconductor devices with overlapping gate electrodes and methods of fabricating the sameKWON SUNG-UN·Filed 2005·Application pending·0 cites
- 3537US2006011968A1Semiconductor devices and methods of forming the sameKWON SUNG-UN·Filed 2005·Application pending·0 cites
- 3635US8728882B2Manufacturing method for thin film transistor array panelHWANG JAE SEUNG·Filed 2012·Granted May 20, 2014·0 cites·21 claims
- 3733US2007210348A1Phase-change memory device and methods of fabricating the sameSONG JONGHEUI·Filed 2006·Application pending·0 cites
- 3829US4793145ADoor shutter for use in a refrigeratorHWANG JAE S·Filed 1987·Granted Dec 27, 1988·8 cites·8 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →