Inventor · disambiguated record
Nobuyuki Ishiwata
Also filed as: ISHIWATA NOBUYUKI
92 granted patents·4 pending applications·1,141 citations·filing 1988–2013
99Inventor score
Top patents by PatentIndex Score
96 records- 0195US6466416B1Magnetic head, method for making the same and magnetic recording/reproducing device using the sameNEC CORP·Filed 2000·Granted Oct 15, 2002·67 cites·15 claims
- 0293US6624987B1Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic materialNEC CORP·Filed 2000·Granted Sep 23, 2003·41 cites·3 claims
- 0393US6542342B1Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layerNEC CORP·Filed 1999·Granted Apr 1, 2003·69 cites·1 claims
- 0492US7929342B2Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memoryNEC CORP·Filed 2006·Granted Apr 19, 2011·29 cites·43 claims
- 0590US8040724B2Magnetic domain wall random access memoryNEC CORP·Filed 2008·Granted Oct 18, 2011·22 cites·15 claims
- 0690US7042319B2Thin film electromagnet and switching device comprising itDENSO CORP·Filed 2002·Granted May 9, 2006·36 cites·31 claims
- 0789US8379429B2Domain wall motion element and magnetic random access memoryNEC CORP·Filed 2009·Granted Feb 19, 2013·20 cites·15 claims
- 0889US6950290B2Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layerNEC CORP·Filed 2002·Granted Sep 27, 2005·21 cites·18 claims
- 0988US6999287B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2004·Granted Feb 14, 2006·21 cites·11 claims
- 1087US8503222B2Non-volatile logic circuitSUZUKI TETSUHIRO·Filed 2010·Granted Aug 6, 2013·11 cites·28 claims
- 1187US8120127B2Magnetic random access memory and method of manufacturing the sameNAGAHARA KIYOKAZU·Filed 2008·Granted Feb 21, 2012·19 cites·9 claims
- 1286US6490139B1Magneto-resistive element and magnetic head for data writing/readingNEC CORP·Filed 2000·Granted Dec 3, 2002·33 cites·11 claims
- 1385US8154913B2Magnetoresistance effect element and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted Apr 10, 2012·11 cites·20 claims
- 1485US6452204B1Tunneling magnetoresistance transducer and method for manufacturing the sameNEC CORP·Filed 1999·Granted Sep 17, 2002·91 cites·27 claims
- 1584US9379312B2Magnetoresistive effect element and magnetic random access memory using the sameSUGIBAYASHI TADAHIKO·Filed 2010·Granted Jun 28, 2016·7 cites·9 claims
- 1684US7161774B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2006·Granted Jan 9, 2007·7 cites·5 claims
- 1782US7372673B2Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layerNEC CORP·Filed 2005·Granted May 13, 2008·7 cites·5 claims
- 1882US7369375B2Magneto-resistance effect element and magneto-resistance effect headNEC CORP·Filed 2006·Granted May 6, 2008·6 cites·15 claims
- 1982US6903908B2Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layerNEC CORP·Filed 2001·Granted Jun 7, 2005·16 cites·7 claims
- 2082US6791794B2Magnetic head having an antistripping layer for preventing a magnetic layer from strippingNEC CORP·Filed 2002·Granted Sep 14, 2004·14 cites·23 claims
- 2181US8559214B2Magnetic memory device and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Oct 15, 2013·12 cites·23 claims
- 2281US6798626B2Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic materialNEC CORP·Filed 2003·Granted Sep 28, 2004·13 cites·3 claims
- 2381US6747853B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2003·Granted Jun 8, 2004·13 cites·5 claims
- 2480US8416611B2Magnetoresistance effect element and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted Apr 9, 2013·12 cites·38 claims
- 2580US8194436B2Magnetic random access memory, write method therefor, and magnetoresistance effect elementFUKAMI SHUNSUKE·Filed 2008·Granted Jun 5, 2012·8 cites·17 claims
- 2680US6718621B1Magnetoresistive head production methodNEC CORP·Filed 2000·Granted Apr 13, 2004·15 cites·12 claims
- 2779US8923042B2Magnetic random access memoryNEC CORP·Filed 2013·Granted Dec 30, 2014·3 cites·3 claims
- 2879US8351249B2Magnetic random access memoryNEC CORP·Filed 2007·Granted Jan 8, 2013·6 cites·3 claims
- 2979US6341053B1Magnetic tunnel junction elements and their fabrication methodNEC CORP·Filed 1998·Granted Jan 22, 2002·81 cites·13 claims
- 3078US8174873B2Magnetic random access memory and initializing method for the sameSUZUKI TETSUHIRO·Filed 2008·Granted May 8, 2012·11 cites·13 claims
- 3178US6934132B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2001·Granted Aug 23, 2005·12 cites·5 claims
- 3277US8547733B2Magnetic random access memoryISHIWATA NOBUYUKI·Filed 2012·Granted Oct 1, 2013·3 cites·3 claims
- 3377US8526222B2Magnetic random access memoryISHIWATA NOBUYUKI·Filed 2012·Granted Sep 3, 2013·3 cites·3 claims
- 3476US8120950B2Semiconductor deviceFUKAMI SHUNSUKE·Filed 2009·Granted Feb 21, 2012·10 cites·14 claims
- 3576US6597543B1Thin-film magnetic head and magnetic storage apparatus using the sameTDK CORP·Filed 1999·Granted Jul 22, 2003·21 cites·63 claims
- 3675US6687082B1Magnetic head and manufacturing method thereof and magnetic recording and reproducing apparatusNEC CORP·Filed 2000·Granted Feb 3, 2004·11 cites·1 claims
- 3773US8174086B2Magnetoresistive element, and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted May 8, 2012·8 cites·14 claims
- 3873US5641557AMagnetoresistive elementNEC CORP·Filed 1995·Granted Jun 24, 1997·21 cites·7 claims
- 3972US8687414B2Magnetic memory element and magnetic random access memoryNAGAHARA KIYOKAZU·Filed 2009·Granted Apr 1, 2014·8 cites·18 claims
- 4072US7023659B2Magnetic head having an antistripping layer for preventing a magnetic layer from strippingNEC CORP·Filed 2004·Granted Apr 4, 2006·6 cites·31 claims
- 4172US6754051B2Spin valve transducer having partly patterned magnetoresistance elementTDK CORP·Filed 2003·Granted Jun 22, 2004·6 cites·11 claims
- 4272US5876843AMagnetoresistive elementNEC CORP·Filed 1997·Granted Mar 2, 1999·20 cites·17 claims
- 4371US5736264AMagnetic core and magnetic head using the sameNEC CORP·Filed 1993·Granted Apr 7, 1998·20 cites·5 claims
- 4470US8791534B2Magnetic memory device and magnetic memoryFUKAMI SHUNSUKE·Filed 2011·Granted Jul 29, 2014·4 cites·14 claims
- 4570US8592930B2Magnetic memory element, magnetic memory and initializing methodFUKAMI SHUNSUKE·Filed 2010·Granted Nov 26, 2013·4 cites·20 claims
- 4670US5892641AMagnetoresistive effect head with individual layers satisfying a basic inequality involving layer thickness and ion milling ratesNEC CORP·Filed 1996·Granted Apr 6, 1999·22 cites·20 claims
- 4769US7085109B1Spin valve type transducer capable of reducing reproducing gapTDK CORP·Filed 2000·Granted Aug 1, 2006·5 cites·34 claims
- 4867US6493195B1Magnetoresistance element, with lower electrode anti-erosion/flaking layerNEC CORP·Filed 2000·Granted Dec 10, 2002·13 cites·16 claims
- 4967US6055137AMagnetoresistive effect composite head with configured pole tipNEC CORP·Filed 1997·Granted Apr 25, 2000·20 cites·3 claims
- 5067US5938941AMagnetoresistance effect composite head and method of forming the sameNEC CORP·Filed 1998·Granted Aug 17, 1999·19 cites·15 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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