Inventor · disambiguated record
Nobuyoshi Koshida
Also filed as: KOSHIDA NOBUYOSHI
21 granted patents·5 pending applications·267 citations·filing 1993–2011
94Inventor score
Files withMATSUSHITA ELECTRIC WORKS LTD7HEWLETT PACKARD DEVELOPMENT CO2JAPAN SCIENCE & TECH AGENCY2SHARP KK2UNIV TOKYO NAT UNIV CORP2
Top patents by PatentIndex Score
26 records- 0192US6249080B1Field emission electron source, method of producing the same, and use of the sameMATSUSHITA ELECTRIC WORKS LTD·Filed 1998·Granted Jun 19, 2001·77 cites·35 claims
- 0289US6498426B1Field emission-type electron source and manufacturing method thereofMATSUSHITA ELECTRIC WORKS LTD·Filed 2000·Granted Dec 24, 2002·32 cites·23 claims
- 0381US6940087B2Quantum deviceMATSUSHITA ELECTRIC WORKS LTD·Filed 2003·Granted Sep 6, 2005·24 cites·15 claims
- 0481US6285118B1Field emission-type electron source and manufacturing method thereof and display using the electron sourceMATSUSHITA ELECTRIC WORKS LTD·Filed 1999·Granted Sep 4, 2001·38 cites·44 claims
- 0575US5894189ACold electron emission display devicePIONEER ELECTRONIC CORP·Filed 1997·Granted Apr 13, 1999·28 cites·11 claims
- 0672US7091138B2Forming method and a forming apparatus of nanocrystalline silicon structureANELVA CORP·Filed 2004·Granted Aug 15, 2006·15 cites·8 claims
- 0765US6791248B2Field emission electron sourceMATSUSHITA ELECTRIC WORKS LTD·Filed 2003·Granted Sep 14, 2004·9 cites·14 claims
- 0862US6814849B2Luminescence stabilization of anodically oxidized porous silicon layersCANADA NAT RES COUNCIL·Filed 2001·Granted Nov 9, 2004·3 cites·15 claims
- 0959US7119361B2Luminescence stabilization of anodically oxidized porous silicon layersCA NAT RESEARCH COUNCIL·Filed 2004·Granted Oct 10, 2006·2 cites·13 claims
- 1059US6590321B1Field emission electron sourceMATSUSHITA ELECTRIC WORKS LTD·Filed 1999·Granted Jul 8, 2003·20 cites·17 claims
- 1156US6794805B1Field emission electron source, method of producing the same, and use of the sameMATSUSHITA ELECTRIC WORKS LTD·Filed 1999·Granted Sep 21, 2004·12 cites·22 claims
- 1250US8130593B2Pressure wave generator and temperature controlling method thereofHAYASHI MASATO·Filed 2007·Granted Mar 6, 2012·0 cites·13 claims
- 1350US6771010B2Silicon emitter with low porosity heavily doped contact layerHEWLETT PACKARD DEVELOPMENT CO·Filed 2001·Granted Aug 3, 2004·1 cites·4 claims
- 1449US2010193362A1Method for processing silicon base material, article processed by the method, and processing apparatusWARABISAKO TERUNORI·Filed 2008·Application pending·0 cites
- 1548US7307379B2Electron emitting element and image forming apparatus employing itSHARP KK·Filed 2004·Granted Dec 11, 2007·3 cites·13 claims
- 1647US2011204290A1Silicon-based blue-green phosphorescent material of which luminescence peak can be controlled by excitation wavelength and process for producing silicon-based blue-green phosphorescent materialUNIV TOKYO NAT UNIV CORP·Filed 2009·Application pending·0 cites
- 1744US7515851B2Electron emitter, charger, and charging methodSHARP KK·Filed 2004·Granted Apr 7, 2009·2 cites·5 claims
- 1844US6939728B2Method of fabricating silicon emitter with a low porosity heavily doped contact layerHEWLETT PACKARD DEVELOPMENT CO·Filed 2003·Granted Sep 6, 2005·0 cites·25 claims
- 1944US2005201575A1Thermally excited sound wave generating deviceFiled 2004·Application pending·0 cites
- 2043US7306990B2Information storage element, manufacturing method thereof, and memory arrayJAPAN SCIENCE & TECH AGENCY·Filed 2003·Granted Dec 11, 2007·1 cites·16 claims
- 2142US2009027758A1Reversible Coloring and Decoloring Solid-State Device, a Reversible Conductive Property Changing Solid-State Device, a Reversible Refractive Index Changing Solid-State Device, a Nonradiative Display Device, a Conducting Path Device and a Light Waveguide DeviceUNIV TOKYO NAT UNIV CORP·Filed 2006·Application pending·0 cites
- 2242US2009078928A1Light-emitting element, light-emitting device, and information display deviceKOSHIDA NOBUYOSHI·Filed 2004·Application pending·0 cites
- 2339US7053422B2Solid-state self-emission display and its production methodJAPAN SCIENCE & TECH AGENCY·Filed 2002·Granted May 30, 2006·0 cites·16 claims
- 2435US8653519B2Electronic device and method for manufacturing sameICHIHARA TSUTOMU·Filed 2011·Granted Feb 18, 2014·0 cites·9 claims
- 2533US6897604B2Method of generating ballistic electrons and ballistic electron solid semiconductor element and light emitting element and display deviceJAPAN SCIENCE & TECH CORP·Filed 2001·Granted May 24, 2005·0 cites·3 claims
- 2630US5413883AReversible electrochemical electrodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted May 9, 1995·0 cites·2 claims
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