Inventor · disambiguated record
Bartlomiej Adam Kardasz
Also filed as: KARDASZ BARTLOMIEJ · KARDASZ Bartlomiej Adam
40 granted patents·2 pending applications·226 citations·filing 2015–2022
97Inventor score
Top patents by PatentIndex Score
42 records- 0199US9728712B2Spin transfer torque structure for MRAM devices having a spin current injection capping layerSPIN TRANSFER TECH INC·Filed 2015·Granted Aug 8, 2017·72 cites·28 claims
- 0298US10236439B1Switching and stability control for perpendicular magnetic tunnel junction deviceSPIN MEMORY INC·Filed 2017·Granted Mar 19, 2019·15 cites·11 claims
- 0398US10032978B1MRAM with reduced stray magnetic fieldsSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 24, 2018·33 cites·34 claims
- 0497US10339993B1Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switchingSPIN MEMORY INC·Filed 2017·Granted Jul 2, 2019·10 cites·20 claims
- 0597US10026892B2Precessional spin current structure for MRAMSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 17, 2018·27 cites·16 claims
- 0696US10468588B2Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layerSPIN MEMORY INC·Filed 2018·Granted Nov 5, 2019·8 cites·20 claims
- 0795US10580827B1Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switchingSPIN MEMORY INC·Filed 2018·Granted Mar 3, 2020·8 cites·37 claims
- 0895US10468590B2High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memorySPIN MEMORY INC·Filed 2016·Granted Nov 5, 2019·7 cites·15 claims
- 0991US10319900B1Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment densitySPIN MEMORY INC·Filed 2017·Granted Jun 11, 2019·4 cites·21 claims
- 1086US11264557B2High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devicesINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2017·Granted Mar 1, 2022·2 cites·7 claims
- 1186US10651370B2Perpendicular magnetic tunnel junction retention and endurance improvementSPIN MEMORY INC·Filed 2017·Granted May 12, 2020·2 cites·14 claims
- 1284US10916696B2Method for manufacturing magnetic memory element with post pillar formation annealingSPIN MEMORY INC·Filed 2019·Granted Feb 9, 2021·6 cites·18 claims
- 1384US10665777B2Precessional spin current structure with non-magnetic insertion layer for MRAMSPIN MEMORY INC·Filed 2017·Granted May 26, 2020·5 cites·12 claims
- 1484US10141499B1Perpendicular magnetic tunnel junction device with offset precessional spin current layerSPIN TRANSFER TECH INC·Filed 2017·Granted Nov 27, 2018·2 cites·15 claims
- 1582US10672976B2Precessional spin current structure with high in-plane magnetization for MRAMSPIN MEMORY INC·Filed 2017·Granted Jun 2, 2020·3 cites·20 claims
- 1682US10147872B2Spin transfer torque structure for MRAM devices having a spin current injection capping layerSPIN TRANSFER TECH INC·Filed 2017·Granted Dec 4, 2018·4 cites·23 claims
- 1781US10367139B2Methods of manufacturing magnetic tunnel junction devicesSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 30, 2019·3 cites·25 claims
- 1879US10615335B2Spin transfer torque structure for MRAM devices having a spin current injection capping layerSPIN MEMORY INC·Filed 2018·Granted Apr 7, 2020·3 cites·23 claims
- 1978US10211395B1Method for combining NVM class and SRAM class MRAM elements on the same chipSPIN TRANSFER TECH INC·Filed 2017·Granted Feb 19, 2019·4 cites·18 claims
- 2076US10424723B2Magnetic tunnel junction devices including an optimization layerSPIN TRANSFER TECH INC·Filed 2017·Granted Sep 24, 2019·2 cites·19 claims
- 2175US12075706B2Precessional spin current structure with non-magnetic insertion layer for MRAMINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 2275US10879454B2Magnetic tunnel junction memory element with improved reference layer stability for magnetic random access memory applicationSPIN TRANSFER TECH INC·Filed 2018·Granted Dec 29, 2020·1 cites·20 claims
- 2372US11925125B2High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devicesINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2022·Granted Mar 5, 2024·0 cites·18 claims
- 2469US12069957B2Method for manufacturing a magnetic random-access memory device using post pillar formation annealingINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2022·Granted Aug 20, 2024·0 cites·17 claims
- 2569US10734574B2Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memorySPIN MEMORY INC·Filed 2019·Granted Aug 4, 2020·0 cites·9 claims
- 2669US10374147B2Perpendicular magnetic tunnel junction having improved reference layer stabilitySPIN MEMORY INC·Filed 2017·Granted Aug 6, 2019·2 cites·20 claims
- 2768US11271149B2Precessional spin current structure with nonmagnetic insertion layer for MRAMINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2020·Granted Mar 8, 2022·0 cites·3 claims
- 2866US11545620B2Methods of manufacture precessional spin current magnetic tunnel junction devicesINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2020·Granted Jan 3, 2023·0 cites·15 claims
- 2966US10424357B2Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layerSPIN MEMORY INC·Filed 2017·Granted Sep 24, 2019·2 cites·7 claims
- 3059US10367136B2Methods for manufacturing a perpendicular magnetic tunnel junction (p-MTJ) MRAM having a precessional spin current injection (PSC) structureSPIN MEMORY INC·Filed 2017·Granted Jul 30, 2019·1 cites·9 claims
- 3157US11329217B2Method for manufacturing a magnetic random-access memory device using post pillar formation annealingINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2019·Granted May 10, 2022·0 cites·8 claims
- 3257US10784439B2Precessional spin current magnetic tunnel junction devices and methods of manufactureSPIN MEMORY INC·Filed 2017·Granted Sep 22, 2020·0 cites·16 claims
- 3356US11355699B2Precessional spin current structure for MRAMINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2020·Granted Jun 7, 2022·0 cites·21 claims
- 3455US10840436B2Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufactureSPIN MEMORY INC·Filed 2017·Granted Nov 17, 2020·0 cites·19 claims
- 3550US10553787B2Precessional spin current structure for MRAMSPIN MEMORY INC·Filed 2018·Granted Feb 4, 2020·0 cites·17 claims
- 3647US11283010B2Precessional spin current structure for magnetic random access memory with novel capping materialsINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2018·Granted Mar 22, 2022·0 cites·9 claims
- 3747US2019237664A1Perpendicular Magnetic Anisotropy Interface Tunnel Junction DevicesSPIN TRANSFER TECH INC·Filed 2019·Application pending·0 cites
- 3846US10374153B2Method for manufacturing a magnetic memory device by pre-patterning a bottom electrode prior to patterning a magnetic materialSPIN MEMORY INC·Filed 2017·Granted Aug 6, 2019·0 cites·13 claims
- 3941US10461242B2Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applicationsSPIN MEMORY INC·Filed 2017·Granted Oct 29, 2019·0 cites·20 claims
- 4039US10388853B2Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayersSPIN MEMORY INC·Filed 2017·Granted Aug 20, 2019·0 cites·13 claims
- 4137US11329099B2Magnetic memory chip having nvm class and SRAM class MRAM elements on the same chipINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2017·Granted May 10, 2022·0 cites·11 claims
- 4236US2019392879A1MAGNETIC MEMORY ELEMENT HAVING MgO ISOLATION LAYERSPIN MEMORY INC·Filed 2018·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →