Inventor · disambiguated record
Shi-Min Wu
Also filed as: WU SHI F · WU SHI-MIN
7 granted patents·5 pending applications·9 citations·filing 2005–2024
77Inventor score
Top patents by PatentIndex Score
12 records- 0193US11063157B1Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·6 cites·20 claims
- 0288US11769792B2Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·1 cites·20 claims
- 0384US2025063744A1Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0483US12176387B2Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 0575US9761658B2Shallow trench isolation structure with raised portion between active areas and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·2 cites·20 claims
- 0674US2025113496A1Trench capacitor film scheme to reduce substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0768US12199139B2Trench capacitor film scheme to reduce substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 0858US11152462B2Semiconductor device having finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·20 claims
- 0956US2025063743A1In-trench capacitor merged structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1054US10367059B2Method of manufacturing a semiconductor structure having a buried raised portionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 30, 2019·0 cites·20 claims
- 1147US2008139085A1Hollow bra cupWU SHI-MIN·Filed 2006·Application pending·0 cites
- 1246US2006207175A1FlowerpotWU SHI F·Filed 2005·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →