Inventor · disambiguated record
Yoshihiro Uozumi
Also filed as: UOZUMI YOSHIHIRO
29 granted patents·12 pending applications·250 citations·filing 2000–2022
96Inventor score
Top patents by PatentIndex Score
41 records- 0196US6261953B1Method of forming a copper oxide film to etch a copper surface evenlyTOSHIBA KK·Filed 2000·Granted Jul 17, 2001·96 cites·12 claims
- 0291US6475909B2Method of fabricating metal wiring on a semiconductor substrate using ammonia-containing plating and etching solutionsTOSHIBA KK·Filed 2001·Granted Nov 5, 2002·41 cites·4 claims
- 0390US9213242B2Substrate processing method and substrate processing apparatusUOZUMI YOSHIHIRO·Filed 2012·Granted Dec 15, 2015·9 cites·23 claims
- 0489US8222160B2Metal containing sacrifice material and method of damascene wiring formationUOZUMI YOSHIHIRO·Filed 2010·Granted Jul 17, 2012·11 cites·16 claims
- 0588US8946809B2Method for manufacturing semiconductor memory device and semiconductor memory deviceTOSHIBA KK·Filed 2013·Granted Feb 3, 2015·11 cites·20 claims
- 0684US8211800B2Ru cap metal post cleaning method and cleaning chemicalUOZUMI YOSHIHIRO·Filed 2010·Granted Jul 3, 2012·7 cites·20 claims
- 0783US6492271B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2000·Granted Dec 10, 2002·27 cites·25 claims
- 0876US11921428B2Substrate processing method and substrate processing apparatusKIOXIA CORP·Filed 2022·Granted Mar 5, 2024·0 cites·6 claims
- 0976US8349718B2Self-aligned silicide formation on source/drain through contact viaTOSHIBA KK·Filed 2011·Granted Jan 8, 2013·3 cites·17 claims
- 1073US6459111B1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2000·Granted Oct 1, 2002·15 cites·6 claims
- 1172US9099474B2Self-aligned silicide formation on source/drain through contact viaTOSHIBA KK·Filed 2012·Granted Aug 4, 2015·2 cites·34 claims
- 1272US7884027B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Feb 8, 2011·5 cites·18 claims
- 1371US12068267B2Semiconductor device and method for manufacturing the sameKIOXIA CORP·Filed 2022·Granted Aug 20, 2024·0 cites·19 claims
- 1469US8168528B2Restoration method using metal for better CD controllability and Cu filingISOBAYASHI ATSUNOBU·Filed 2009·Granted May 1, 2012·4 cites·27 claims
- 1567US7345352B2Insulating tube, semiconductor device employing the tube, and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Mar 18, 2008·3 cites·4 claims
- 1664US6818556B2Method of plating a metal or metal compound on a semiconductor substrate that includes using the same main component in both plating and etching solutionsTOSHIBA KK·Filed 2002·Granted Nov 16, 2004·6 cites·20 claims
- 1763US11621239B2Semiconductor device and method for manufacturing the sameKIOXIA CORP·Filed 2020·Granted Apr 4, 2023·0 cites·14 claims
- 1863US7635601B2Method of manufacturing semiconductor device and cleaning apparatusTOSHIBA KK·Filed 2006·Granted Dec 22, 2009·1 cites·11 claims
- 1962US7183203B2Method of plating a metal or metal compound on a semiconductor substrate that includes using the same main component in both plating and etching solutionsTOSHIBA KK·Filed 2004·Granted Feb 27, 2007·5 cites·21 claims
- 2062US2019214277A1Substrate processing method and substrate processing apparatusTOSHIBA MEMORY CORP·Filed 2019·Application pending·0 cites
- 2160US8912089B2Method for manufacturing a semiconductor device including a stacked body comprising pluralities of first and second metallic conductive layersTOSHIBA KK·Filed 2013·Granted Dec 16, 2014·1 cites·17 claims
- 2258US7850818B2Method of manufacturing semiconductor device and cleaning apparatusTOSHIBA KK·Filed 2009·Granted Dec 14, 2010·0 cites·5 claims
- 2354US9553189B2Self-aligned silicide formation on source/drain through contact viaTOSHIBA KK·Filed 2015·Granted Jan 24, 2017·0 cites·30 claims
- 2454US2009286391A1Semiconductor device fabrication methodTOSHIBA KK·Filed 2009·Application pending·0 cites
- 2554US2016071747A1Substrate processing method and substrate processing apparatusTOSHIBA KK·Filed 2015·Application pending·0 cites
- 2649US7405133B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Jul 29, 2008·0 cites·5 claims
- 2748US7022580B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2002·Granted Apr 4, 2006·2 cites·2 claims
- 2848US2007054482A1Semiconductor device fabrication methodNAKAJIMA TAKAHITO·Filed 2006·Application pending·0 cites
- 2947US7282437B2Insulating tube, semiconductor device employing the tube, and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Oct 16, 2007·0 cites·11 claims
- 3045US2009004052A1Oxidation protection apparatus and method for chemical liquidMATSUMURA TSUYOSHI·Filed 2007·Application pending·0 cites
- 3145US2008188085A1Post-dry etching cleaning liquid composition and process for fabricating semiconductor deviceMURAMATSU MASAFUMI·Filed 2008·Application pending·0 cites
- 3243US7776754B2Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Aug 17, 2010·0 cites·6 claims
- 3343US6995472B2Insulating tubeTOSHIBA KK·Filed 2003·Granted Feb 7, 2006·1 cites·6 claims
- 3442US2009250431A1Substrate processing apparatus and substrate processing methodINUKAI MINAKO·Filed 2009·Application pending·0 cites
- 3541US8513140B2Post-dry etching cleaning liquid composition and process for fabricating semiconductor deviceMURAMATSU MASAFUMI·Filed 2010·Granted Aug 20, 2013·0 cites·11 claims
- 3640US9929017B2Etching method using hydrogen peroxide solution containing tungstenTOSHIBA MEMORY CORP·Filed 2013·Granted Mar 27, 2018·0 cites·20 claims
- 3740US2006019201A1Post-dry etching cleaning liquid composition and process for fabricating semiconductor deviceMURAMATSU MASAFUMI·Filed 2005·Application pending·0 cites
- 3837US2012244690A1Ion implanted resist strip with superacidUOZUMI YOSHIHIRO·Filed 2011·Application pending·0 cites
- 3937US2006051969A1Semiconductor device fabrication methodNAKAJIMA TAKAHITO·Filed 2005·Application pending·0 cites
- 4036US2013196512A1Method and apparatus for manufacturing semiconductor deviceKOIDE TATSUHIKO·Filed 2012·Application pending·0 cites
- 4134US2012139033A1Semiconductor device and method of manufacturing the sameYAMASAKI HIROYUKI·Filed 2010·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →