Inventor · disambiguated record
Katsushi Akita
Also filed as: AKITA KATSUSHI
90 granted patents·21 pending applications·888 citations·filing 1998–2017
99Inventor score
Top patents by PatentIndex Score
111 records- 0199US7968864B2Group-III nitride light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jun 28, 2011·254 cites·11 claims
- 0299US7939354B2Method of fabricating nitride semiconductor laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted May 10, 2011·241 cites·21 claims
- 0398US7816238B2GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Oct 19, 2010·43 cites·8 claims
- 0497US7933303B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Apr 26, 2011·30 cites·20 claims
- 0594US8227277B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jul 24, 2012·15 cites·9 claims
- 0692US8306082B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2010·Granted Nov 6, 2012·12 cites·16 claims
- 0792US8304793B2III-nitride semiconductor optical device and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2010·Granted Nov 6, 2012·13 cites·22 claims
- 0892US7851821B2Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 14, 2010·9 cites·29 claims
- 0991US9123843B2Semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 1, 2015·8 cites·10 claims
- 1091US6998284B2Semiconductor device having quantum well structure, and method of forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Feb 14, 2006·20 cites·23 claims
- 1188US7858963B2Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 28, 2010·6 cites·11 claims
- 1287US8546163B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Oct 1, 2013·6 cites·10 claims
- 1386US9281427B2Semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Mar 8, 2016·3 cites·13 claims
- 1484US9773932B2Epitaxial wafer and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 26, 2017·6 cites·11 claims
- 1584US8053806B2Group III nitride semiconductor device and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Nov 8, 2011·4 cites·24 claims
- 1684US7728348B2Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jun 1, 2010·10 cites·6 claims
- 1783US9608148B2Semiconductor element and method for producing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Mar 28, 2017·3 cites·6 claims
- 1883US8143140B2Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the sameKASAI HITOSHI·Filed 2010·Granted Mar 27, 2012·7 cites·5 claims
- 1981US9040955B2Semiconductor device, optical sensor device and semiconductor device manufacturing methodFUJII KEI·Filed 2011·Granted May 26, 2015·2 cites·11 claims
- 2081US8642943B2Semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor waferMORI HIROKI·Filed 2010·Granted Feb 4, 2014·4 cites·16 claims
- 2181US8048702B2Method of fabricating nitride-based semiconductor optical deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Nov 1, 2011·5 cites·19 claims
- 2281US7190004B2Light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Mar 13, 2007·32 cites·162 claims
- 2380US8148751B2Group III nitride semiconductor wafer and group III nitride semiconductor deviceHASHIMOTO SHIN·Filed 2010·Granted Apr 3, 2012·4 cites·12 claims
- 2479US8592289B2Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide waferHASHIMOTO SHIN·Filed 2010·Granted Nov 26, 2013·4 cites·20 claims
- 2578US8927962B2Group III nitride semiconductor optical deviceUENO MASAKI·Filed 2010·Granted Jan 6, 2015·4 cites·18 claims
- 2677US8461570B2Semiconductor device and manufacturing method thereofFUJII KEI·Filed 2010·Granted Jun 11, 2013·4 cites·7 claims
- 2776US7687822B2Light emitting apparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Mar 30, 2010·6 cites·2 claims
- 2875US8513684B2Nitride semiconductor light emitting deviceKYONO TAKASHI·Filed 2011·Granted Aug 20, 2013·3 cites·20 claims
- 2975US8207556B2Group III nitride semiconductor device and epitaxial substrateKYONO TAKASHI·Filed 2011·Granted Jun 26, 2012·2 cites·28 claims
- 3075US7851243B1Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 14, 2010·2 cites·1 claims
- 3175US7294867B2Semiconductor light generating deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Nov 13, 2007·11 cites·23 claims
- 3274US8476615B2GaN-based semiconductor light emitting device and the method for making the sameENYA YOHEI·Filed 2011·Granted Jul 2, 2013·3 cites·18 claims
- 3374US7884351B2Nitride semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Feb 8, 2011·5 cites·6 claims
- 3473US9129808B2Epitaxial wafer, photodiode, optical sensor device, and methods for producing epitaxial wafer and photodiodeFUJII KEI·Filed 2011·Granted Sep 8, 2015·3 cites·10 claims
- 3573US8803274B2Nitride-based semiconductor light-emitting elementKYONO TAKASHI·Filed 2010·Granted Aug 12, 2014·3 cites·10 claims
- 3673US8420426B2Method of manufacturing a light-emitting deviceHIRAYAMA HIDEKI·Filed 2011·Granted Apr 16, 2013·1 cites·21 claims
- 3773US8415180B2Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical deviceHASHIMOTO SHIN·Filed 2010·Granted Apr 9, 2013·2 cites·24 claims
- 3872US8653561B2III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic deviceHASHIMOTO SHIN·Filed 2011·Granted Feb 18, 2014·3 cites·48 claims
- 3972US7547910B2Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jun 16, 2009·4 cites·6 claims
- 4071US10822722B2Gallium arsenide crystal body and gallium arsenide crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Nov 3, 2020·1 cites·7 claims
- 4171US8198623B2Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial waferAKITA KATSUSHI·Filed 2010·Granted Jun 12, 2012·2 cites·11 claims
- 4270US8357946B2Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Granted Jan 22, 2013·2 cites·39 claims
- 4370US8207544B2Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor deviceENYA YOHEI·Filed 2010·Granted Jun 26, 2012·2 cites·24 claims
- 4469US7508011B2Semiconductor light generating deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Mar 24, 2009·6 cites·16 claims
- 4568US8679955B2Method for forming epitaxial wafer and method for fabricating semiconductor deviceHASHIMOTO SHIN·Filed 2010·Granted Mar 25, 2014·2 cites·8 claims
- 4668US8483251B2Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diodeENYA YOHEI·Filed 2011·Granted Jul 9, 2013·2 cites·24 claims
- 4768US8067257B2Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceUENO MASAKI·Filed 2010·Granted Nov 29, 2011·1 cites·19 claims
- 4867US9159853B2Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Oct 13, 2015·1 cites·7 claims
- 4967US7351347B2Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Apr 1, 2008·10 cites·6 claims
- 5066US8633514B2Group III nitride semiconductor wafer and group III nitride semiconductor deviceHASHIMOTO SHIN·Filed 2012·Granted Jan 21, 2014·1 cites·24 claims
Showing the top 50 of 111 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →