Inventor · disambiguated record
Nick Holonyak, Jr.
Also filed as: HOLONYAK JR NICK · HOLONYAK NICK · HOLONYAK NICK JR
56 granted patents·7 pending applications·1,883 citations·filing 1978–2017
99Inventor score
Top patents by PatentIndex Score
63 records- 0196US4594603ASemiconductor device with disordered active regionUNIV ILLINOIS·Filed 1985·Granted Jun 10, 1986·175 cites·10 claims
- 0295US7813396B2Transistor laser devices and methodsUNIV ILLINOIS·Filed 2009·Granted Oct 12, 2010·25 cites·22 claims
- 0395US7711015B2Method for controlling operation of light emitting transistors and laser transistorsUNIV ILLINOIS·Filed 2007·Granted May 4, 2010·27 cites·29 claims
- 0495US7535034B2PNP light emitting transistor and methodUNIV ILLINOIS·Filed 2006·Granted May 19, 2009·43 cites·17 claims
- 0595US7354780B2Semiconductor light emitting devices and methodsUNIV ILLINOIS·Filed 2005·Granted Apr 8, 2008·37 cites·12 claims
- 0695US7286583B2Semiconductor laser devices and methodsUNIV ILLINOIS·Filed 2005·Granted Oct 23, 2007·44 cites·24 claims
- 0793US8179937B2High speed light emitting semiconductor methods and devicesWALTER GABRIEL·Filed 2010·Granted May 15, 2012·12 cites·6 claims
- 0893US5262360AAlGaAs native oxideUNIV ILLINOIS·Filed 1991·Granted Nov 16, 1993·124 cites·67 claims
- 0991US6753273B2Semiconductor devices and methodsUNIV ILLINOIS·Filed 2002·Granted Jun 22, 2004·54 cites·39 claims
- 1090US7693195B2Semiconductor light emitting devices and methodsUNIV ILLINOIS·Filed 2008·Granted Apr 6, 2010·13 cites·19 claims
- 1190US5696023AMethod for making aluminum gallium arsenide semiconductor device with native oxide layerUNIV ILLINOIS·Filed 1995·Granted Dec 9, 1997·76 cites·1 claims
- 1288US6369403B1Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layerUNIV ILLINOIS·Filed 2000·Granted Apr 9, 2002·68 cites·20 claims
- 1388US5373522ASemiconductor devices with native aluminum oxide regionsUNIV ILLINOIS·Filed 1993·Granted Dec 13, 1994·76 cites·13 claims
- 1488US4589115AWavelength tuning of quantum well heterostructure lasers using an external gratingXEROX CORP·Filed 1983·Granted May 13, 1986·34 cites·17 claims
- 1588US4511408ASemiconductor device fabrication with disordering elements introduced into active regionUNIV ILLINOIS·Filed 1982·Granted Apr 16, 1985·64 cites·66 claims
- 1687US8509274B2Light emitting and lasing semiconductor methods and devicesWALTER GABRIEL·Filed 2010·Granted Aug 13, 2013·7 cites·14 claims
- 1787US5581571ASemiconductor devices and methodsUNIV ILLINOIS·Filed 1995·Granted Dec 3, 1996·77 cites·9 claims
- 1887US4365260ASemiconductor light emitting device with quantum well active region of indirect bandgap semiconductor materialUNIV ILLINOIS·Filed 1980·Granted Dec 21, 1982·29 cites·12 claims
- 1986US5936266ASemiconductor devices and methods with tunnel contact hole sourcesUNIV ILLINOIS·Filed 1997·Granted Aug 10, 1999·103 cites·27 claims
- 2086US4817103ASemiconductor light emitting device with stacked active regionsUNIV ILLINOIS·Filed 1986·Granted Mar 28, 1989·36 cites·28 claims
- 2185US7091082B2Semiconductor method and deviceUNIV ILLINOIS·Filed 2004·Granted Aug 15, 2006·48 cites·10 claims
- 2284US8005124B2Optical bandwidth enhancement of light emitting and lasing transistor devices and circuitsUNIV ILLINOIS·Filed 2009·Granted Aug 23, 2011·7 cites·14 claims
- 2384US5567980ANative oxide of an aluminum-bearing group III-V semiconductorUNIV ILLINOIS·Filed 1995·Granted Oct 22, 1996·50 cites·10 claims
- 2484US5517039ASemiconductor devices fabricated with passivated high aluminum-content III-V materialHEWLETT PACKARD CO·Filed 1994·Granted May 14, 1996·75 cites·20 claims
- 2583US4639275AForming disordered layer by controlled diffusion in heterojunction III-V semiconductorUNIV ILLINOIS·Filed 1984·Granted Jan 27, 1987·51 cites·23 claims
- 2682US8970126B2Opto-electronic devices and methodsUNIV ILLINOIS·Filed 2012·Granted Mar 3, 2015·5 cites·29 claims
- 2781US8179939B2Light emitting and lasing semiconductor devices and methodsHOLONYAK JR NICK·Filed 2010·Granted May 15, 2012·5 cites·15 claims
- 2881US4378255AMethod for producing integrated semiconductor light emitterUNIV ILLINOIS·Filed 1981·Granted Mar 29, 1983·60 cites·11 claims
- 2980US5400354ALaminated upper cladding structure for a light-emitting deviceFiled 1994·Granted Mar 21, 1995·64 cites·23 claims
- 3079US8269431B2Method and apparatus for producing linearized optical signalsTHEN HAN WUI·Filed 2010·Granted Sep 18, 2012·5 cites·24 claims
- 3178US7888199B2PNP light emitting transistor and methodUNIV ILLINOIS·Filed 2008·Granted Feb 15, 2011·6 cites·15 claims
- 3278US5550081AMethod of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environmentUNIV ILLINOIS·Filed 1995·Granted Aug 27, 1996·47 cites·24 claims
- 3377US10283933B1Transistor laser electrical and optical bistable switchingUNIV ILLINOIS·Filed 2017·Granted May 7, 2019·2 cites·19 claims
- 3477US7696536B1Semiconductor method and deviceUNIV ILLINOIS·Filed 2006·Granted Apr 13, 2010·6 cites·18 claims
- 3577US4439782ASemiconductor device with heterojunction of Alx Ga1-x As--AlAs--GaUNIV ILLINOIS·Filed 1980·Granted Mar 27, 1984·25 cites·33 claims
- 3676US6919784B2High cycle MEMS deviceUNIV ILLINOIS·Filed 2002·Granted Jul 19, 2005·17 cites·19 claims
- 3776US5403775AMethod of making semiconductor devices and techniques for controlled optical confinementUNIV ILLINOIS·Filed 1994·Granted Apr 4, 1995·50 cites·19 claims
- 3876US5327448ASemiconductor devices and techniques for controlled optical confinementUNIV ILLINOIS·Filed 1992·Granted Jul 5, 1994·50 cites·13 claims
- 3976US4871690ASemiconductor structures utilizing semiconductor support means selectively pretreated with migratory defectsXEROX CORP·Filed 1988·Granted Oct 3, 1989·44 cites·7 claims
- 4073US7953133B2Light emitting and lasing semiconductor devices and methodsUNIV ILLINOIS·Filed 2008·Granted May 31, 2011·3 cites·19 claims
- 4173US7888625B2Method and apparatus for producing linearized optical signals with a light-emitting transistorUNIV ILLINOIS·Filed 2008·Granted Feb 15, 2011·7 cites·26 claims
- 4271US4585491AWavelength tuning of quantum well lasers by thermal annealingXEROX CORP·Filed 1983·Granted Apr 29, 1986·20 cites·24 claims
- 4370US8842706B2Opto-electronic oscillator and methodUNIV ILLINOIS·Filed 2012·Granted Sep 23, 2014·1 cites·19 claims
- 4470US8675703B2Two terminal light emitting and lasing devices and methodsWALTER GABRIEL·Filed 2010·Granted Mar 18, 2014·2 cites·33 claims
- 4570US7998807B2Method for increasing the speed of a light emitting biopolar transistor deviceUNIV ILLINOIS·Filed 2004·Granted Aug 16, 2011·14 cites·38 claims
- 4666US5425043ASemiconductor laserUNIV ILLINOIS·Filed 1994·Granted Jun 13, 1995·34 cites·2 claims
- 4765US6773949B2Semiconductor devices and methodsUNIV ILLINOIS·Filed 2002·Granted Aug 10, 2004·10 cites·14 claims
- 4864US5353295ASemiconductor laser device with coupled cavitiesUNIV ILLINOIS·Filed 1992·Granted Oct 4, 1994·32 cites·34 claims
- 4962US9478942B2Transistor laser optical switching and memory techniques and devicesUNIV ILLINOIS·Filed 2015·Granted Oct 25, 2016·1 cites·21 claims
- 5055US7142076B2High cycle MEMS deviceUNIV ILLINOIS·Filed 2004·Granted Nov 28, 2006·6 cites·10 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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