Inventor · disambiguated record
Shoichi Takamizawa
Also filed as: TAKAMIZAWA SHOICHI
6 granted patents·1 pending application·52 citations·filing 1997–2021
81Inventor score
Technology areasH10P
Top patents by PatentIndex Score
7 records- 0158US7214271B2Silicon single crystal wafer process apparatus, silicon single crystal wafer, and manufacturing method of silicon epitaxial waferSHINETSU HANDOTAI KK·Filed 2002·Granted May 8, 2007·7 cites·6 claims
- 0254US5998283ASilicon wafer having plasma CVD gettering layer with components/composition changing in depth-wise direction and method of manufacturing the silicon waferSHINETSU HANDOTAI KK·Filed 1997·Granted Dec 7, 1999·19 cites·20 claims
- 0348US2022077287A1Nitride semiconductor substrateTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 0442US5899744AMethod of manufacturing semiconductor wafersSHINETSU HANDOTAI KK·Filed 1997·Granted May 4, 1999·12 cites·6 claims
- 0538US9127376B2Method for manufacturing nitride semiconductor self-supporting substrate and nitride semiconductor self-supporting substrateTAKAMIZAWA SHOICHI·Filed 2007·Granted Sep 8, 2015·0 cites·17 claims
- 0637US5993493AMethod of manufacturing mirror-polished silicon wafers, and apparatus for processing silicon wafersSHINETSU HANDOTAI KK·Filed 1997·Granted Nov 30, 1999·7 cites·7 claims
- 0737US5970365ASilicon wafer including amorphous silicon layer formed by PCVD and method of manufacturing waferSHIN ETSU HANDOTAI LTD·Filed 1997·Granted Oct 19, 1999·7 cites·5 claims
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