Inventor · disambiguated record
Hwi-Chan Jun
Also filed as: JUN HWI CHAN
35 granted patents·3 pending applications·101 citations·filing 2015–2024
96Inventor score
Top patents by PatentIndex Score
38 records- 0197US11282752B2Method of forming vertical field-effect transistor devices having gate linerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 22, 2022·4 cites·20 claims
- 0297US9876094B2Method for fabricating semiconductor device having a silicide layerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 23, 2018·20 cites·20 claims
- 0395US11769769B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 26, 2023·2 cites·19 claims
- 0495US10153212B2Semiconductor device including contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 11, 2018·12 cites·10 claims
- 0595US9406770B2Method of fabricating semiconductor device having a resistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 2, 2016·13 cites·19 claims
- 0691US11316010B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0790US10763256B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 1, 2020·2 cites·20 claims
- 0890US10340219B2Semiconductor device having a metal viaSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 2, 2019·7 cites·21 claims
- 0990US9589899B2Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structuresJUN HWI-CHAN·Filed 2015·Granted Mar 7, 2017·11 cites·18 claims
- 1088US9679991B2Method for manufacturing semiconductor device using gate portion as etch maskSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 13, 2017·6 cites·19 claims
- 1188US9640529B2Semiconductor device having a resistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 2, 2017·4 cites·10 claims
- 1284US2025120162A1Vertical field-effect transistor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1383US12218010B2Vertical field-effect transistor devices having gate linerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Feb 4, 2025·0 cites·20 claims
- 1483US10553484B2Semiconductor devices including contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 4, 2020·3 cites·19 claims
- 1583US10177093B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 8, 2019·3 cites·20 claims
- 1682US11004788B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 11, 2021·3 cites·19 claims
- 1782US9812552B2Methods for fabricating semiconductor devicesJUN HWI-CHAN·Filed 2015·Granted Nov 7, 2017·5 cites·19 claims
- 1880US11094593B2Semiconductor device including contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 17, 2021·2 cites·15 claims
- 1975US11915982B2Method of forming vertical field-effect transistor devices having gate linerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·15 claims
- 2074US10665588B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 26, 2020·1 cites·18 claims
- 2172US10879239B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
- 2271US11804540B2Vertical field effect transistor (VFET) structure with dielectric protection layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 2370US11798850B2Semiconductor device including contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·17 claims
- 2470US10886227B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 5, 2021·1 cites·20 claims
- 2569US11935835B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 19, 2024·0 cites·14 claims
- 2667US12249648B2Semiconductor device having spacer between contract patternsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 2766US11721581B2Semiconductor devices including contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 2863US11538924B2Vertical field effect transistor (VFET) structure with dielectric protection layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·6 claims
- 2962US11616016B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 28, 2023·0 cites·20 claims
- 3061US10818549B2Semiconductor devices including contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 27, 2020·0 cites·11 claims
- 3156US10658288B2Semiconductor device having a metal viaSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 19, 2020·0 cites·20 claims
- 3255US11257913B2Vertical field effect transistor with self-aligned contact structure and layoutSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·19 claims
- 3353US11380791B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 5, 2022·0 cites·13 claims
- 3448US11322602B2Vertical field-effect transistor (VFET) devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 3, 2022·0 cites·19 claims
- 3548US11309405B2Vertical field effect transistor device having protruded shallow trench isolation and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·18 claims
- 3646US2021242025A1Silicidation of source/drain region of vertical field effect transistor (vfet) structureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 3743US10910367B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·0 cites·15 claims
- 3833US2016049394A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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