Inventor · disambiguated record
Chao-Nien Huang
Also filed as: HUANG CHAO-NIEN
11 granted patents·1 pending application·270 citations·filing 1997–2015
91Inventor score
Top patents by PatentIndex Score
12 records- 0187USRE42422ELight emitting diode having a transparent substrateEPISTAR CORP·Filed 2007·Granted Jun 7, 2011·9 cites·16 claims
- 0287US6163038AWhite light-emitting diode and method of manufacturing the sameIND TECH RES INST·Filed 1998·Granted Dec 19, 2000·146 cites·43 claims
- 0383US6936860B2Light emitting diode having an insulating substrateEPISTAR CORP·Filed 2002·Granted Aug 30, 2005·50 cites·14 claims
- 0473US6972208B2Method for manufacturing a light emitting diode having a transparent substrateEPISTAR CORP·Filed 2004·Granted Dec 6, 2005·10 cites·7 claims
- 0566US6867426B2Light emitting diode having a transparent substrateEPISTAR CORP·Filed 2002·Granted Mar 15, 2005·7 cites·8 claims
- 0657US8932885B2Method of making a multilayer structureEPISTAR CORP·Filed 2012·Granted Jan 13, 2015·0 cites·20 claims
- 0757US6190508B1Method of oxidizing nitride material enhanced by illumination with UV light at room temperatureIND TECH RES INST·Filed 1999·Granted Feb 20, 2001·14 cites·11 claims
- 0854US8344353B2Light emitting diode having a transparent substrateEPISTAR CORP·Filed 2011·Granted Jan 1, 2013·0 cites·26 claims
- 0954US2015123151A1Light emitting deviceEPISTAR CORP·Filed 2015·Application pending·0 cites
- 1053US6319808B1Ohmic contact to semiconductor devices and method of manufacturing the sameIND TECHNOLOGYRES INST·Filed 1999·Granted Nov 20, 2001·18 cites·7 claims
- 1150US5874320AMethod for forming P-type gallium nitrideIND TECH RES INST·Filed 1997·Granted Feb 23, 1999·16 cites·4 claims
- 1228US7061110B2Ohmic contact to semiconductor devices and method of manufacturing the sameIND TECH RES INST·Filed 1999·Granted Jun 13, 2006·0 cites·20 claims
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