Inventor · disambiguated record
Paul Castrovillo
Also filed as: CASTROVILLO PAUL · CASTROVILLO PAUL J
9 granted patents·3 pending applications·398 citations·filing 2001–2006
90Inventor score
Top patents by PatentIndex Score
12 records- 0198US6673701B1Atomic layer deposition methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 6, 2004·223 cites·36 claims
- 0297US7271077B2Deposition methods with time spaced and time abutting precursor pulsesMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 18, 2007·82 cites·64 claims
- 0393US7402512B2High aspect ratio contact structure with reduced silicon consumptionMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 22, 2008·18 cites·6 claims
- 0483US6746952B2Diffusion barrier layer for semiconductor wafer fabricationMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 8, 2004·24 cites·78 claims
- 0580US6696368B2Titanium boronitride layer for high aspect ratio semiconductor devicesMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 24, 2004·25 cites·120 claims
- 0675US6908849B2High aspect ratio contact structure with reduced silicon consumptionMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 21, 2005·13 cites·8 claims
- 0770US6858904B2High aspect ratio contact structure with reduced silicon consumptionMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 22, 2005·10 cites·18 claims
- 0851US6791149B2Diffusion barrier layer for semiconductor wafer fabricationMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 14, 2004·2 cites·49 claims
- 0949US2006202283A1Metal silicide adhesion layer for contact structuresDERAA AMMAR·Filed 2006·Application pending·0 cites
- 1045US6822299B2Boron-doped titanium nitride layer for high aspect ratio semiconductor devicesMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 23, 2004·1 cites·95 claims
- 1141US2006175664A1Semiconductor constructions, and methods of forming metal silicidesMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
- 1239US2003042614A1Metal silicide adhesion layer for contact structuresFiled 2001·Application pending·0 cites
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