Inventor · disambiguated record
Tomoyoshi Mishima
Also filed as: MISHIMA TOMOYOSHI
21 granted patents·7 pending applications·314 citations·filing 1984–2019
94Inventor score
Top patents by PatentIndex Score
28 records- 0187US5633516ALattice-mismatched crystal structures and semiconductor device using the sameHITACHI LTD·Filed 1995·Granted May 27, 1997·76 cites·32 claims
- 0286US5495115ASemiconductor crystalline laminate structure, forming method of the same, and semiconductor device employing the sameHITACHI LTD·Filed 1994·Granted Feb 27, 1996·72 cites·10 claims
- 0374US5481120ASemiconductor device and its fabrication methodHITACHI LTD·Filed 1993·Granted Jan 2, 1996·36 cites·35 claims
- 0473US5548138ASemiconductor device with reduced tunnel resistance and circuitry using the sameHITACHI LTD·Filed 1993·Granted Aug 20, 1996·35 cites·34 claims
- 0568US4673959AHeterojunction FET with doubly-doped channelHITACHI LTD·Filed 1984·Granted Jun 16, 1987·20 cites·15 claims
- 0667US9530858B2Nitride semiconductor device and method of manufacturing the sameSUMITOMO CHEMICAL CO·Filed 2014·Granted Dec 27, 2016·2 cites·16 claims
- 0761US7786509B2Field-effect transistor and method of making sameHITACHI CABLE·Filed 2007·Granted Aug 31, 2010·3 cites·9 claims
- 0861US4914488ACompound semiconductor structure and process for making sameHITACHI LTD·Filed 1988·Granted Apr 3, 1990·26 cites·19 claims
- 0958US8835930B2Gallium nitride rectifying deviceTSUCHIYA TADAYOSHI·Filed 2012·Granted Sep 16, 2014·1 cites·6 claims
- 1058US6735353B2Module for optical transmitterHITACHI LTD·Filed 2002·Granted May 11, 2004·8 cites·10 claims
- 1158US5003366AHetero-junction bipolar transistorHITACHI LTD·Filed 1990·Granted Mar 26, 1991·20 cites·5 claims
- 1256US6728283B2Semiconductor laser and photo module using the sameHITACHI LTD·Filed 2002·Granted Apr 27, 2004·4 cites·6 claims
- 1348US10998188B2Gallium nitride laminated substrate and semiconductor deviceUNIV HOSEI·Filed 2019·Granted May 4, 2021·0 cites·13 claims
- 1447US11640906B2Crystal laminate, semiconductor device and method for manufacturing the sameSUMITOMO CHEMICAL CO·Filed 2018·Granted May 2, 2023·0 cites·15 claims
- 1545US10797181B2Semiconductor device and method for manufacturing the sameUNIV HOSEI·Filed 2017·Granted Oct 6, 2020·0 cites·15 claims
- 1645US9059328B2Nitride semiconductor element and method of manufacturing the sameHITACHI METALS LTD·Filed 2013·Granted Jun 16, 2015·0 cites·15 claims
- 1744US9899570B2Semiconductor multilayer structure and method of manufacturing the sameSUMITOMO CHEMICAL CO·Filed 2015·Granted Feb 20, 2018·0 cites·12 claims
- 1843US2009026499A1Semiconductor integrated circuit device and semiconductor switching device using thereofKIKAWA TAKESHI·Filed 2008·Application pending·0 cites
- 1941US2014191369A1Nitride semicondutor deviceHITACHI METALS LTD·Filed 2013·Application pending·0 cites
- 2039US2020091016A1Manufacturing method and inspection method of group-iii nitride laminate, and group-iii nitride laminateSUMITOMO CHEMICAL CO·Filed 2017·Application pending·0 cites
- 2138US4835583ASemiconductor device having strained superlattice buffer layers with In-doped GaAs substrateHITACHI LTD·Filed 1986·Granted May 30, 1989·8 cites·14 claims
- 2236US2012313108A1Semiconductor diodeTSUCHIYA TADAYOSHI·Filed 2012·Application pending·0 cites
- 2336US2003062538A1Semiconductor device and electronic device using the sameFiled 2002·Application pending·0 cites
- 2435US10685841B2Semiconductor deviceUNIV HOSEI·Filed 2016·Granted Jun 16, 2020·0 cites·4 claims
- 2535US10483350B2Semiconductor deviceUNIV HOSEI·Filed 2016·Granted Nov 19, 2019·0 cites·5 claims
- 2634US4672406ASemiconductor member and semiconductor device employing the sameHITACHI LTD·Filed 1984·Granted Jun 9, 1987·3 cites·11 claims
- 2734US2003132496A1Compound semiconductor device, method for producing thereof and high frequency module using thereofHITACHI LTD·Filed 2002·Application pending·0 cites
- 2833US2002149032A1Fet (field effect transistor) and high frequency moduleFiled 2002·Application pending·0 cites
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