Inventor · disambiguated record
Theodore G. Hollinger
Also filed as: HOLLINGER THEODORE G
11 granted patents·457 citations·filing 1986–1993
92Inventor score
Top patents by PatentIndex Score
11 records- 0190US4895810AIopographic pattern delineated power mosfet with profile tailored recessed sourceADVANCED POWER TECHNOLOGY·Filed 1988·Granted Jan 23, 1990·112 cites·48 claims
- 0287US5045903ATopographic pattern delineated power MOSFET with profile tailored recessed sourceADVANCED POWER TECHNOLOGY·Filed 1989·Granted Sep 3, 1991·87 cites·16 claims
- 0385US5019522AMethod of making topographic pattern delineated power MOSFET with profile tailored recessed sourceADVANCED POWER TECHNOLOGY·Filed 1990·Granted May 28, 1991·103 cites·10 claims
- 0472US4748103AMask-surrogate semiconductor process employing dopant protective regionADVANCED POWER TECHNOLOGY·Filed 1986·Granted May 31, 1988·40 cites·11 claims
- 0571US4899268AFrequency-dependent single-phase to three-phase AC power conversionAPC ONSITE INC·Filed 1989·Granted Feb 6, 1990·30 cites·4 claims
- 0665US4908744AFrequency-independent single-phase to three-phase AC power conversionAPC ONSITE INC·Filed 1989·Granted Mar 13, 1990·25 cites·8 claims
- 0752US5089434AMask surrogate semiconductor process employing dopant-opaque regionADVANCED POWER TECHNOLOGY·Filed 1990·Granted Feb 18, 1992·24 cites·14 claims
- 0845US5256583AMask surrogate semiconductor process with polysilicon gate protectionADVANCED POWER TECHNOLOGY·Filed 1992·Granted Oct 26, 1993·17 cites·10 claims
- 0943US5231474ASemiconductor device with doped electrical breakdown control regionADVANCED POWER TECHNOLOGY·Filed 1992·Granted Jul 27, 1993·11 cites·4 claims
- 1034US5434095AMethod for controlling electrical breakdown in semiconductor power devicesSUNDSTRAND CORP·Filed 1993·Granted Jul 18, 1995·5 cites·4 claims
- 1125US4766094ASemiconductor doping processHOLLINGER THEODORE G·Filed 1986·Granted Aug 23, 1988·3 cites·5 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →