Inventor · disambiguated record
William Xia
Also filed as: XIA WILLIAM · XIA WILLIAM H
11 granted patents·1 pending application·58 citations·filing 2001–2017
87Inventor score
Top patents by PatentIndex Score
12 records- 0196US9773741B1Bondable device including a hydrophilic layerQUALCOMM INC·Filed 2016·Granted Sep 26, 2017·20 cites·30 claims
- 0288US8159870B2Array structural design of magnetoresistive random access memory (MRAM) bit cellsXIA WILLIAM·Filed 2008·Granted Apr 17, 2012·20 cites·23 claims
- 0387US9970826B2Bipolar junction transistor voltage-drop-based temperature sensorsQUALCOMM INC·Filed 2015·Granted May 15, 2018·4 cites·38 claims
- 0477US9799824B2STT-MRAM design enhanced by switching current induced magnetic fieldQUALCOMM INC·Filed 2016·Granted Oct 24, 2017·2 cites·20 claims
- 0570US8264052B2Symmetric STT-MRAM bit cell designXIA WILLIAM·Filed 2008·Granted Sep 11, 2012·5 cites·25 claims
- 0664US8085581B2STT-MRAM bit cell having a rectangular bottom electrode plate and improved bottom electrode plate width and interconnect metal widthsXIA WILLIAM·Filed 2008·Granted Dec 27, 2011·3 cites·22 claims
- 0762US8094486B2Pad design with buffers for STT-MRAM or other short pulse signal transmissionXIA WILLIAM·Filed 2009·Granted Jan 10, 2012·2 cites·45 claims
- 0856US8625341B2Array structural design of Magnetoresistive Random Access Memory (MRAM) bit cellsXIA WILLIAM H·Filed 2012·Granted Jan 7, 2014·2 cites·34 claims
- 0950US9385305B2STT-MRAM design enhanced by switching current induced magnetic fieldQUALCOMM INC·Filed 2013·Granted Jul 5, 2016·0 cites·8 claims
- 1047US10578497B2Diode-based temperature sensorQUALCOMM INC·Filed 2017·Granted Mar 3, 2020·0 cites·30 claims
- 1145US2009290406A1Low loading pad design for STT MRAM or other short pulse signal transmissionQUALCOMM INC·Filed 2008·Application pending·0 cites
- 1229US6573735B2Reliability of vias and diagnosis by e-beam probingQUALCOMM INC·Filed 2001·Granted Jun 3, 2003·0 cites·15 claims
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