Inventor · disambiguated record
Paul Abel
Also filed as: ABEL PAUL · ABEL PAUL C · ABEL PAUL DAVID
20 granted patents·3 pending applications·129 citations·filing 1975–2023
92Inventor score
Top patents by PatentIndex Score
23 records- 0197US11802342B2Methods for wet atomic layer etching of rutheniumTOKYO ELECTRON LTD·Filed 2022·Granted Oct 31, 2023·6 cites·24 claims
- 0293US10982335B2Wet atomic layer etching using self-limiting and solubility-limited reactionsTOKYO ELECTRON LTD·Filed 2019·Granted Apr 20, 2021·10 cites·20 claims
- 0392US12444606B2Methods for forming vertically layered ionic liquid crystal (ILC) structures on a semiconductor substrateTOKYO ELECTRON LTD·Filed 2023·Granted Oct 14, 2025·2 cites·20 claims
- 0489US8376100B2Regenerative shock absorberLEVANT POWER CORP·Filed 2008·Granted Feb 19, 2013·67 cites·25 claims
- 0588US9680151B2Sub-stoichiometric, chalcogen-containing-germanium, tin, or lead anodes for lithium or sodium ion batteriesMULLINS CHARLES BUDDIE·Filed 2014·Granted Jun 13, 2017·18 cites·20 claims
- 0677US12037517B2Ruthenium CMP chemistry based on halogenationTOKYO ELECTRON LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 0777US11437250B2Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactionsTOKYO ELECTRON LTD·Filed 2019·Granted Sep 6, 2022·2 cites·22 claims
- 0874US12494375B2Method to selectively etch silicon nitride to silicon oxide using surface alkylationTOKYO ELECTRON LTD·Filed 2023·Granted Dec 9, 2025·0 cites·14 claims
- 0972US12276033B2Methods for wet etching of noble metalsTOKYO ELECTRON LTD·Filed 2022·Granted Apr 15, 2025·0 cites·24 claims
- 1072US11820919B2Ruthenium CMP chemistry based on halogenationTOKYO ELECTRON LTD·Filed 2022·Granted Nov 21, 2023·0 cites·18 claims
- 1172USD335410SToilet tissue dispenserBOBRICK INC·Filed 1991·Granted May 11, 1993·18 cites·1 claims
- 1255US12237166B2Methods for selective removal of surface oxides on metal filmsTOKYO ELECTRON LTD·Filed 2022·Granted Feb 25, 2025·0 cites·21 claims
- 1353US12243752B2Systems for etching a substrate using a hybrid wet atomic layer etching processTOKYO ELECTRON LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 1453US11915941B2Dynamically adjusted purge timing in wet atomic layer etchingTOKYO ELECTRON LTD·Filed 2022·Granted Feb 27, 2024·0 cites·21 claims
- 1553US11866831B2Methods for wet atomic layer etching of copperTOKYO ELECTRON LTD·Filed 2022·Granted Jan 9, 2024·0 cites·22 claims
- 1652US12463050B2Methods for wet atomic layer etching of molybdenumTOKYO ELECTRON LTD·Filed 2023·Granted Nov 4, 2025·0 cites·22 claims
- 1752US12444610B2Methods for etching a substrate using a hybrid wet atomic layer etching processTOKYO ELECTRON LTD·Filed 2022·Granted Oct 14, 2025·0 cites·19 claims
- 1849US2004101549A1TreatmentsFiled 2002·Application pending·0 cites
- 1948US10867815B2Photonically tuned etchant reactivity for wet etchingTOKYO ELECTRON LTD·Filed 2019·Granted Dec 15, 2020·0 cites·15 claims
- 2046US2018171468A1Method for deposting a functional material on a substrateNCC NANO LLC·Filed 2016·Application pending·0 cites
- 2144US2021242031A1Method for using ultra-thin etch stop layers in selective atomic layer etchingTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 2243US4005980ASatellite tube supportPOLYSIUS AG·Filed 1975·Granted Feb 1, 1977·4 cites·16 claims
- 2329US4008995ARotary kiln constructionPOLYSIUS AG·Filed 1975·Granted Feb 22, 1977·2 cites·8 claims
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