Inventor · disambiguated record
Yuan-Tai Tseng
Also filed as: TSENG YUAN-TAI
73 granted patents·8 pending applications·158 citations·filing 2010–2025
98Inventor score
Top patents by PatentIndex Score
81 records- 0197US10573811B2Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 25, 2020·16 cites·20 claims
- 0296US11818962B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 0396US10454021B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 22, 2019·12 cites·19 claims
- 0496US9570454B2Structure with emedded EFS3 and FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·15 cites·20 claims
- 0595US10614948B2Method for forming inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 7, 2020·3 cites·20 claims
- 0694US9219109B2Inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 22, 2015·4 cites·20 claims
- 0793US10003022B2RRAM cell structure with conductive etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 19, 2018·8 cites·20 claims
- 0891US11871686B2Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·1 cites·20 claims
- 0991US9728719B2Leakage resistant RRAM/MIM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 8, 2017·6 cites·20 claims
- 1091US2025329351A1Trench formation scheme for programmable metallization cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1190US2025359071A1Method of forming memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1289US10720568B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·3 cites·19 claims
- 1389US9691883B2Asymmetric formation approach for a floating gate of a split gate flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 27, 2017·7 cites·20 claims
- 1489US8928120B1Wafer edge protection structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·8 cites·20 claims
- 1588US11121308B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·3 cites·20 claims
- 1688US11088202B2Method of forming memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·3 cites·20 claims
- 1788US10283700B2Semiconductor memory structure with magnetic tunnel junction (MTJ) cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·5 cites·20 claims
- 1888US9048128B2Inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 2, 2015·4 cites·20 claims
- 1986US12369332B2Memory device for reducing thermal crosstalkTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 2086US10763304B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·3 cites·20 claims
- 2185US12274182B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 2285US11088203B23D RRAM cell structure for reducing forming and set voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·5 cites·20 claims
- 2385US10276634B2Semiconductor memory structure with magnetic tunnel junction (MTJ) cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·4 cites·20 claims
- 2484US9865389B2Inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 9, 2018·1 cites·20 claims
- 2583US11532697B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 20, 2022·2 cites·20 claims
- 2683US9502515B2Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·3 cites·20 claims
- 2783US9472645B1Dual control gate spacer structure for embedded flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·3 cites·20 claims
- 2883US9257571B1Memory gate first approach to forming a split gate flash memory cell deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·6 cites·20 claims
- 2983US2025324615A1Memory device for reducing thermal crosstalkTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3082US9768220B2Deep trench isolation structure for image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 19, 2017·6 cites·20 claims
- 3182US2025234791A1Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3281US9954100B2Method and apparatus for high voltate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 24, 2018·3 cites·21 claims
- 3381US9589976B2Structure and method to reduce polysilicon loss from flash memory devices during replacement gate (RPG) process in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·3 cites·20 claims
- 3481US9159842B1Embedded nonvolatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 13, 2015·3 cites·20 claims
- 3581US2024023460A1Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3680US12477746B2Method of forming memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 3780US10164181B2Sidewall protection of memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·3 cites·20 claims
- 3879US12354695B2Trench formation scheme for programmable metallization cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 3979US12302767B2Buffer layer in memory cell to prevent metal redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 4077US11805660B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 4176US11855127B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4276US11665911B2Method of forming memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 4376US11569296B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 4476US2024088206A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4575US11950434B2Memory device for reducing thermal crosstalkTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 4675US11430956B2RRAM cell structure with conductive etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·1 cites·20 claims
- 4775US11342379B2Trench formation scheme for programmable metallization cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·2 cites·20 claims
- 4875US2024349630A1Phase change memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4974US11785861B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 5074US8334187B2Hard mask for thin film resistor manufactureCHANG LI-WEN·Filed 2010·Granted Dec 18, 2012·4 cites·20 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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